Influence of Structural Parameters on the Behavior of an Asymmetric Linearly Graded Workfunction Trapezoidal Gate SOI MOSFET
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This paper presents a dual metal trapezoidal recessed channel metal oxide semiconductor field effect transistor (MOSFET) embedded with asymmetric stack gate with linearly graded metal work-function technique to improve the carrier transport efficiency and device switching performance. The analytical model for the proposed asymmetric-linearly graded trapezoidal gate (ASY–LGTG) silicon on insulator (SOI) MOSFET has been developed considering parabolic approximation of 2-D Poisson’s equation. The threshold voltage of the device is extracted using minimum surface potential. The simulation work has been carried out using a Silvaco TCAD tool to validate the results of the analytical model. This grooved structure exhibits the corner effect, which plays a dynamic role in the improvement of the device performance. However, the impact of the corner effect can be controlled by the groove corner angle and doping concentration. We have also investigated the impact of different structural parameters such as negative junction depth (NJD), corner angle, substrate doping and stack gate features (upper oxide permittivity and oxide thickness ratio) on the performance of minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL), threshold voltage and device switching characteristics.
KeywordsCorner effect recessed channel asymmetric stack gate negative junction depth LGTG
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