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Journal of Electronic Materials

, Volume 48, Issue 10, pp 6480–6486 | Cite as

Junction Parameters and Electrical Characterization of the Al/n-Si/Cu2CoSnS4/Au Heterojunction

  • I. M. El RadafEmail author
  • H. I. Elsaeedy
  • H. A. Yakout
  • Mardia T. El Sayed
Article
  • 20 Downloads

Abstract

Quaternary kesterite thin films of Cu2CoSnS4 were deposited on the n-Si substrate to fabricate Cu2CoSnS4/n-Si heterojunctions. The x-ray diffraction and field emission scanning electron microscopy were employed to study the structural properties of the Cu2CoSnS4 deposited on to n-Si single crystal substrate. The capacitance–voltage measurements of the Cu2CoSnS4/n-Si heterojunction were investigated to study the junction nature which displays an abrupt junction. The dark IV characteristics of the Cu2CoSnS4/n-Si heterojunction displays a rectification behavior. We characterized the influence of the annealing temperature on the magnitudes of the diode parameters of the Cu2CoSnS4/n-Si heterojunction. The barrier height \( \phi_{\rm{b}} \) of the Cu2CoSnS4/n-Si heterojunction was increased with raising the annealing temperature while the ideality factor n has a reverse performance. The illuminated JV plot of the Cu2CoSnS4/n-Si heterojunction displays an efficiency of 6.17% for the prepared junction.

Keywords

Copper cobalt tin sulfide spray pyrolysis technique XRD FE-SEM photovoltaic IV and CV characteristics heterojunction 

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.Physics Division, Electron Microscope and Thin Films DepartmentNational Research CentreDokki, GizaEgypt
  2. 2.Materials Physics and Energy LaboratoryCollege of Sciences and Art at ArRass - Qassim UniversityArRassKingdom of Saudi Arabia
  3. 3.Department of Physics, Faculty of ScienceKing Khalid UniversityAbhaKingdom of Saudi Arabia
  4. 4.Department of Material Science, Institute of Graduate Studies and ResearchAlexandria UniversityBab SharqiEgypt
  5. 5.Chemical Industries Research Division, Applied Organic Chemistry DepartmentNational Research CentreDokki, GizaEgypt

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