InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection
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Type-II superlattices based on In0.53Ga0.47As/GaAs0.51Sb0.49 (5 nm/5 nm) lattice-matched to InP substrates are investigated for short-wavelength infrared detection. Eight band k.p simulations were utilized to extract information on the electronic band structure, which were in turn used to calculate the optical absorption spectrum of the superlattice. The effective bandgap is calculated to be 0.494 eV, corresponding to a cutoff wavelength of λc = 2.51 μm and optical absorption coefficient of approximately 2000 cm−1 at 2 μm. Quantum efficiency was calculated for a standard InGaAs/T2SL/InGaAs p-i-n device structure, where quantum efficiency exceeding 50% at 2 μm may be achieved. Dark current was calculated considering Auger, radiative, and Shockley–Read–Hall generation-recombination, where Shockley–Read–Hall recombination-generation was found to be the limiting mechanism for a trap density greater than 5 × 1014 cm−3, and radiatively limited performance is predicted for a lower trap density. The estimated dark current density is expected to be comparable to existing HgCdTe technology, while outperforming extended-range InGaAs by more than an order of magnitude.
KeywordsType II superlattice T2SL SWIR k.p perturbation theory optical absorption Synopsys Sentaurus TCAD
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The authors would like to thank Dr. Stefan Birner for assistance with the nextnano software.
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