Journal of Electronic Materials

, Volume 48, Issue 10, pp 6431–6436 | Cite as

Optimization of Titanium Nitride Film for High Power RF MEMS Applications

  • Prem KumarEmail author
  • Deepak Bansal
  • Anuroop
  • Khushbu Mehta
  • Amit Kumar
  • Kamaljit Rangra
  • Dharmendar Boolchandani


In this paper, TiN film has been deposited and optimized at room temperature for high power radio-frequency microelectromechanical system (RF-MEMS) applications. Being hard, titanium nitride is used in the contact area. The contact material should have low resistance and high hardness. TiN thin films were deposited by DC magnetron reactive sputtering using a four inch high purity titanium target in a nitrogen (N2) environment. X-ray diffraction (XRD) analysis is used to confirm crystal structure and purity of TiN film. The effect of various N2 pressure on resistivity and hardness of TiN thin film is investigated. The resistivity of the film decreases and hardness increases with N2 pressure.


Titanium nitride (TiN) DC magnetron reactive sputtering X-ray diffraction (XRD) sheet resistivity 


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The authors would like to thanks CSIR-CEERI, Pilani for providing financial support under MLP-105. The authors would also like to thanks Prof. Anshuman Dalvi from BITS Pilani for XRD results.


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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.CSIR- Central Electronics Engineering Research InstitutePilaniIndia
  2. 2.Malaviya National Institute of TechnologyJaipurIndia

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