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Investigation of AlGaN-Based Near-Ultraviolet Light-Emitting Diodes with a Trapezoidal Electron Blocking Layer

  • Jihang Li
  • Huaimin GuEmail author
  • Guang Li
  • Lang Chen
  • Hengzhi Shi
  • Xinggang Shen
  • Xianqi Yang
  • Nana Liu
  • Rui Yuan
  • Jinyuan Zhang
Article
  • 5 Downloads

Abstract

To improve performance of AlGaN-based ultraviolet light-emitting diodes (UV-LEDs), an LED with a special trapezoidal electron blocking layer (EBL) is investigated numerically. The results show the optimized structure has better photoelectric performance than conventional structure. The light output power of the new structure was enhanced by a factor of 26% compared with the reference conventional LED. The reasons for these improvements are that the special trapezoidal EBL can increase the hole injection efficiency and suppress electron overflow, thus enhancing the radiative recombination rate. Consequently the light output power and the internal quantum efficiency are improved.

Keywords

AlGaN-based ultraviolet light-emitting diodes trapezoidal electron blocking layer light output power internal quantum efficiency 

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Notes

Acknowledgments

This project was supported by National Natural Science Foundation of China National Key Scientific Research Instrument Development Project, China (Grant No. 61527825), Natural Science Foundation of Guangdong Province,China (Grant No. 2015A030313370).

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • Jihang Li
    • 1
  • Huaimin Gu
    • 1
    Email author
  • Guang Li
    • 1
  • Lang Chen
    • 1
  • Hengzhi Shi
    • 1
  • Xinggang Shen
    • 1
  • Xianqi Yang
    • 1
  • Nana Liu
    • 1
  • Rui Yuan
    • 1
  • Jinyuan Zhang
    • 1
  1. 1.Laboratory of Nanophotonic Functional Material and Devices, Institute of Opto-Electronic Materials and TechnologySouth China Normal UniversityGuangzhouChina

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