Parameterized Comparison of Nanotransistors Based on CNT and GNR Materials: Effect of Variation in Gate Oxide Thickness and Dielectric Constant
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Silicon based technology encounters scaling parameters that prohibit the advancement of transistor technology. Graphene nanoribbons (GNR) and carbon nanotubes (CNT) are often considered the predominating devices to replace silicon technology. Carbon nanotube field effect transistors (CNTFETs) are considered the most promising devices because of their most interesting properties such as high current carrying ability (∼ 1010 A/cm2), excellent carrier mobility, scalability, high reliability for elevated temperature operation, and negligible leakage current. In this paper, a comparative analysis of CNTFET and graphene nanoribbon field effect transistors (GNRFET) is presented. The results of simulations are presented, and comparisons of devices are done based on different parameters listed as ION/IOFF current ratio, trans-conductance, and inverse subthreshold slope using NanoTCAD ViDES. After simulation, it is shown that CNTFET offers better results for ION/IOFF on the order of 106, subthreshold swing (SS) as 74.4 mV/dec, and transconductance as 7.6 μS. Further the effect of oxide thickness and dielectric constant has been studied for both FET devices. At the end, it is concluded that CNTFET offers better simulation result than that of GNRFET.
KeywordsCarbon nanotube carbon nanotube field effect transistor graphene nanoribbon field effect transistor NanoTCAD ViDES
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- 1.A. Singh, M. Khosla, and B. Raj, Comparative analysis of carbon nanotube field effect transistors, in IEEE 4th Global Conference on Consumer Electronics (GCCE) (2015), p. 552.Google Scholar
- 2.M.A Kabir, Int. J. Adv. Mater. Sci. Eng. 3(3/4), 1 (2014).Google Scholar
- 3.S.K. Sinha and S. Chaudhary, Advantage of CNTFET characteristics over MOSFET to reduce leakage power, in 2nd IEEE International Conference on Devices, Circuits and Systems (2014), p. 1.Google Scholar
- 4.A. Al-Shaggah, A. Rjoub, and M. Khasawneh, Carbon nanotube field effect transistor models performance and evaluation, in Applied Electrical Engineering and Computing Technologies (AEECT), IEEE Jordan Conference on Applied Electrical Engineering and Computing Technologies (2013), p. 1.Google Scholar
- 6.M.H Rashed and A. Lotfi, A graphene nanoribbon field-effect transistor modeling Integrated system technology. Diss. Thesis Dissertation, Politecnico di Torino (2014).Google Scholar
- 7.F. Prégaldiny, J. B. Kammerer, and C. Lallement, Compact modeling and applications of CNTFETs for analog and digital circuit design, in 13th IEEE International Conference on Electronics, Circuits and Systems (2006). https://doi.org/10.1109/ICECS.2006.379967.
- 15.M. MAnas, A study of single layer and bilayer GNRFET, in UKSim-AMSS 18th International Conference on Computer Modelling and Simulation (2016), p. 93.Google Scholar
- 16.S.Z. Ahmed, M.S. Shawkat, M.I.H. Chowdhury, and S.M. Mominuzzaman, Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric contant, in 10th IEEE International Conference on Nano/Micro Engg and Molecular System (2015), p. 384.Google Scholar
- 20.G. Fiori and G. Iannaccone, 3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors, NanoTCAD ViDES (2016). https://nanohub.org/resources/vides.