Advertisement

Journal of Electronic Materials

, Volume 48, Issue 5, pp 2950–2954 | Cite as

Pressure Dependence of Sb Level in Dilute Nitride and Antimony GaNxSbyAs1−xy

  • Chuan-Zhen ZhaoEmail author
  • Si-Yu Sun
  • Xiao-Dong Sun
  • Sha-Sha Wang
  • Jun Wang
Article
  • 3 Downloads

Abstract

The pressure dependence of the Sb level is achieved by using the double-band anticrossing model to fit the experimental pressure dependence of the band gap energy of dilute nitride and antimony GaNxSbyAs1−xy alloy. It is found that the pressure coefficient for the Sb level is much larger than that for the N level. The difference of the pressure dependence between the Sb level and the N level is due to two factors. One is the different locations of the Sb level and the N level. The other is that the atomic size mismatch and electronegativity difference between As and Sb atoms are much smaller than those between N and As atoms. In addition, it is found that the N-Γ conduction band's minimum coupling interaction is the major factor to affect the pressure dependence of the band gap energy of GaNxSbyAs1−xy.

Keywords

GaNxSbyAs1−xy pressure dependence band gap energy Sb level dilute nitride 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgments

This work is supported by the National Nature Science Foundation of China (61874077, 61504094), Tianjin Research Program of Application Foundation and Advanced Technology (15JCYBJC51900, 17JCQNJC02000).

References

  1. 1.
    D.P. Xu, J.Y.T. Huang, J. Park, L.J. Mawst, T.F. Kuech, X. Song, and S.E. Babcock, Appl. Phys. Lett. 91, 191909 (2007).CrossRefGoogle Scholar
  2. 2.
    V. Braza, D.F. Reyes, A. Gonzalo, A.D. Utrilla, T. Ben, J.M. Ulloa, and D. González, Nanoscale Res. Lett. 12, 356 (2017).CrossRefGoogle Scholar
  3. 3.
    A. Navarro, O. Martinez, B. Galiana, I. Lombardero, M. Ochoa, I. García, M. Gabás, C. Ballesteros, J. Jimenez, and C. Algora, J. Electron. Mater. 47, 5061 (2018).CrossRefGoogle Scholar
  4. 4.
    W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, and S.R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).CrossRefGoogle Scholar
  5. 5.
    C.Z. Zhao, T. Wei, N.N. Li, S.S. Wang, and K.Q. Lu, Appl. Phys. A 115, 927 (2014).CrossRefGoogle Scholar
  6. 6.
    P.J. Klar, H. Grüning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P.M.A. Vicente, and J. Camassel, Appl. Phys. Lett. 76, 3439 (2000).CrossRefGoogle Scholar
  7. 7.
    C.Z. Zhao, N.N. Li, T. Wei, and C.X. Tang, Chin. Phys. Lett. 28, 127801 (2011).CrossRefGoogle Scholar
  8. 8.
    C.Z. Zhao, H.Y. Ren, T. Wei, S.S. Wang, and K.Q. Lu, J. Electron. Mater. 47, 4539 (2018).CrossRefGoogle Scholar
  9. 9.
    N. Ben Sedrine, C. Bouhafs, J.C. Harmand, R. Chtourou, and V. Darakchieva, Appl. Phys. Lett. 97, 201903 (2010).CrossRefGoogle Scholar
  10. 10.
    Y.T. Lin, T.C. Ma, T.Y. Chen, and H.H. Lin, Appl. Phys. Lett. 93, 171914 (2008).CrossRefGoogle Scholar
  11. 11.
    C.Z. Zhao, T. Wei, X.D. Sun, S.S. Wang, and K.Q. Lu, Phys. B 485, 35 (2016).CrossRefGoogle Scholar
  12. 12.
    W.J. Wang, F.H. Su, K. Ding, G.H. Li, S.F. Yoon, W.J. Fan, S. Wicaksono, and B.S. Ma, Phys. Rev. B 74, 195201 (2006).CrossRefGoogle Scholar
  13. 13.
    C.Z. Zhao, T. Wei, X.D. Sun, S.S. Wang, and K.Q. Lu, J. Alloys Compd. 608, 66 (2014).CrossRefGoogle Scholar
  14. 14.
    I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).CrossRefGoogle Scholar
  15. 15.
    S.H. Wei and A. Zunger, Phys. Rev. B 60, 5404 (1999).CrossRefGoogle Scholar
  16. 16.
    S. Tiwari and D.J. Frank, Appl. Phys. Lett. 60, 630 (1992).CrossRefGoogle Scholar
  17. 17.
    K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins, C.X. Wang, X. Liu, Y.J. Cho, and J. Furdyna, Phys. Rev. B 75, 045203 (2007).CrossRefGoogle Scholar
  18. 18.
    S. Francoeur, S. Tixier, E. Young, T. Tiedje, and A. Mascarenhas, Phys. Rev. B 77, 085209 (2008).CrossRefGoogle Scholar
  19. 19.
    L. Bellaiche, S.H. Wei, and A. Zunger, Phys. Rev. B 54, 17568 (1996).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  • Chuan-Zhen Zhao
    • 1
    Email author
  • Si-Yu Sun
    • 1
  • Xiao-Dong Sun
    • 1
  • Sha-Sha Wang
    • 1
  • Jun Wang
    • 1
  1. 1.Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information EngineeringTianjin Polytechnics UniversityTianjinChina

Personalised recommendations