Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

  • Hung Pham
  • Hiep N. Tran
  • Anthony S. Holland
  • Jim G. PartridgeEmail author


Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to a variety of semiconductors. Graphitic contacts to n-type 6H-SiC have demonstrated current rectification ratios (at ± 1.5 V) up to 1:106. In this article, the current voltage temperature (IVT) characteristics of these devices are examined to reveal more detail on the junction/barrier properties that are critical to performance. Analysis of the IVT characteristics and disparity between barrier heights extracted from the IVT data and CV data show inhomogeneity in the contacts and this has been quantified. Accounting for the inhomogeneity, the homogeneous Richardson constant of the n-type 6H-SiC can be extracted from the IVT data, and this value agrees with the reported theoretical value.


Graphenic carbon graphitic carbon electronic materials Schottky contacts 


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© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.School of EngineeringRMIT UniversityMelbourneAustralia
  2. 2.School of Science and TechnologyRMIT UniversityHo Chi Minh CityVietnam
  3. 3.School of ScienceRMIT UniversityMelbourneAustralia

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