Influence of Doping and Splitting of Source in a Group IV Material Based Tunnel Field Effect Transistor
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In this work, the effect of abrupt source doping in a tunnel field effect transistor (TFET) using SiGe as the source and drain material is investigated for future low-voltage and high-power applications. The effect of critical device factors, such as dielectric material and gate oxide thickness and dependency on the mole fraction, are examined. The results of the proposed SiGe-Si-SiGe TFET structure are compared with existing data of Si TFET and SiGe-Si-Si TFET with and without abrupt doping. The proposed structure shows better ION/IOFF ratio of the order of 1011 and a sub-threshold swing of 18.18 mV/decade, which ensures fast switching applications of the device.
KeywordsBand-to-band tunneling (BTBT) TCAD simulation ambipolar conduction tunnel field effect transistor (TFET)
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The work is supported by DST-Science and Engineering Research Board (DST-SERB), Govt. of India, under Early Career Research Award Scheme 2017 (FILE NO. ECR/2017/000794) awarded to Rikmantra Basu. Harshvardhan Kumar thankfully acknowledges financial support in the form of a Junior Research Fellowship under the scheme.
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