Journal of Electronic Materials

, Volume 48, Issue 3, pp 1416–1420 | Cite as

Enhanced Magnetic Properties in Ar+-Ion Beam-Bombarded MnBi Thin Films

  • X. LiEmail author
  • C.-H. Wu
  • Y.-J. Lee
  • Y.-L. Huang
  • C.-L. Huang
  • J.-L. Tsai
  • T.-H. Wu
  • T. Chen
  • J. van LieropEmail author
  • K.-W. LinEmail author
5th International Conference of Asian Union of Magnetics Societies
Part of the following topical collections:
  1. 5th International Conference of Asian Union of Magnetics Societies (IcAUMS)


MnBi is a promising ferromagnetic material for applications at elevated temperatures due to its high Curie temperature, sizable magnetocrystalline anisotropy, and increasing coercivity with temperature. However, fabrication of MnBi thin films with ferromagnetic low-temperature phase (LTP) is conventionally difficult due to the peritectic Mn-Bi reaction and Mn oxidization. In this work, in situ Ar+-ion beam bombardment was introduced to modify the microstructure and magnetic properties of (Mn/Bi)n superlattice. Structural characterization revealed formation of MnBi LTP in the as-deposited ion-beam-bombarded samples. Vacuum annealing further promoted growth of MnBi LTP grains with c-axis orientation, leading to remarkably improved perpendicular magnetic anisotropy. Ion-beam bombardment resulted in a 200% increase in the saturation magnetization of the annealed MnBi thin film. This advancement is attributed to the enhanced interdiffusion and reaction of Mn and Bi in the ion-beam-bombarded thin films. A stability test after 150 days in air revealed a remarkable reduction in ferromagnetism due to MnBi decomposition. This work provides an effective approach for fabrication of high-quality MnBi thin films.


MnBi thin film magnetic properties ion-beam bombardment 


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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of PhysicsXiamen UniversityXiamenPeople’s Republic of China
  2. 2.Department of Materials Science and EngineeringNational Chung Hsing UniversityTaichungTaiwan
  3. 3.Graduate School of Materials ScienceNational Yunlin University of Science and TechnologyYunlinTaiwan
  4. 4.Department of Physics and AstronomyUniversity of ManitobaWinnipegCanada

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