Journal of Electronic Materials

, Volume 48, Issue 1, pp 571–582 | Cite as

Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures

  • M. VaghayenegarEmail author
  • K. J. Doyle
  • S. Trivedi
  • P. Wijewarnasuriya
  • David J. Smith


In this work, transmission electron microscopy has been used to investigate HgCdSe/ZnTe/Si (211) heterostructures grown by molecular beam epitaxy and to study the effects of chemical etchants for measurements of defect density in the HgCdSe epilayers. Both ZnTe/Si and HgCdSe/ZnTe interfaces were decorated with {111}-type stacking faults inclined at angles of ∼ 19° or ∼ 90° with respect to the interface plane. Similar stacking faults were also present in the upper regions of the HgCdSe films. High-resolution imaging and Fourier image analysis revealed dislocations, mostly with \( \frac{a}{3}\left\langle\bar{1}11\right\rangle \) Burgers vector, at both ZnTe/Si and HgCdSe/ZnTe interfaces. Etching solutions based on different combinations of nitric acid, hydrochloric acid and lactic acid were tried in attempts to identify an etchant that provided one-to-one correspondence between etch pits and defects in the HgCdSe layer. Focused-ion-beam milling and transmission electron microscopy were used to prepare site-specific cross-section samples from across the etch pits. However, many defects in regions surrounding the etch pits were unaffected by the various different etchants.


HgCdSe (211) ZnTe alternative substrates dislocations etch pits 


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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • M. Vaghayenegar
    • 1
    Email author
  • K. J. Doyle
    • 2
  • S. Trivedi
    • 2
  • P. Wijewarnasuriya
    • 2
  • David J. Smith
    • 3
  1. 1.School of Engineering for Matter, Transport and EnergyArizona State UniversityTempeUSA
  2. 2.U.S. Army Research Laboratory—Sensors and Electronic Devices DirectorateAdelphiUSA
  3. 3.Department of PhysicsArizona State UniversityTempeUSA

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