Journal of Electronic Materials

, Volume 48, Issue 1, pp 454–459 | Cite as

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

  • Kenji IsoEmail author
  • Yuya Gokudan
  • Masumi Shiraishi
  • Minae Nishikado
  • Hisashi MurakamiEmail author
  • Akinori Koukitu


Single-crystalline CdTe films were grown in both (133) and (211) surface orientations on (211) Si substrates by vapor-phase epitaxy using metallic Cd source as a group-II precursor. The orientation of epitaxial films depended on the ratio of group-II and -VI precursors, i.e., II/VI. The orientation of epitaxial films was changed from (133) to (211) by increasing the II/VI under the CdTe growth condition. The surface morphology for (133) CdTe was smooth, whereas the surface for (211) CdTe was composed of hillocks with (111), (110), (101), and (100) facets. The full width at half maximum (FWHM) of the epitaxial films with the same thickness showed that the crystalline quality of (133) CdTe was better than that of (211) CdTe. The dependence of the orientation between (133) and (211) CdTe films on (211) Si substrates on the II/VI was explained by the difference between the step-flow growth on the step and the spontaneous nucleation on the terrace.


CdTe vapor phase epitaxy twin II/VI metallic cadmium 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    S.D. Sordo, L. Abbeno, E. Caroli, A.M. Mancini, A. Zappettini, and P. Ubertini, Sensors 9, 3491 (2000).CrossRefGoogle Scholar
  2. 2.
    W. Bencivelli, E. Bertolucci, U. Bottigli, A.D. Guerra, A. Messineo, W.R. Nelson, P. Randaccio, V. Rosso, and A. Stefanini, Nucl. Instr. Meth. 310, 210 (1991).CrossRefGoogle Scholar
  3. 3.
    S. Collins, S. Vatavu, V. Evani, M. Khan, S. Bakhshi, V. Palekis, C. Rotaru, and C. Ferekides, Thin Solid Films 582, 139 (2015).CrossRefGoogle Scholar
  4. 4.
    Q. Zhang, W. Charles, B. Li, A. Shen, C.A. Meriles, and M.C. Tamargo, J. Cryst. Growth 311, 2603 (2009).CrossRefGoogle Scholar
  5. 5.
    M. Niraula, K. Yasuda, H. Ohnishi, H. Takahashi, K. Eguchi, K. Noda, and Y. Agata, J. Electron. Mater. 35, 1257 (2006).CrossRefGoogle Scholar
  6. 6.
    K. Iso, Y. Gokudan, M. Shiraishi, H. Murakami, and A. Koukitu, J. Electron. Mater. 46, 5884 (2017).CrossRefGoogle Scholar
  7. 7.
    K. Iso, H. Murakami, and A. Koukitu, J. Cryst. Growth 470, 122 (2017).CrossRefGoogle Scholar
  8. 8.
    J. Yin, Q. Huang, J. Zhou, and J. Yin, Thin Solid Films 292, 303 (1997).CrossRefGoogle Scholar
  9. 9.
    M.D. Lange, R. Sporken, J.P. Faurie, Y. Nakamura, and N. Otsuka, Appl. Phys. Lett. 58, 1988 (1991).CrossRefGoogle Scholar
  10. 10.
    K. Kim, H. Kim, S. Suh, M. Carmody, S. Sivananthan, and J. Kim, J. Electron. Mater. 39, 863 (2010).CrossRefGoogle Scholar
  11. 11.
    A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).CrossRefGoogle Scholar
  12. 12.
    K. Mitchell, A.L. Fahrenbruch, and R.H. Bube, Appl. Phys. Lett. 48, 829 (1977).Google Scholar
  13. 13.
    Y. Nakamura, N. Otsuka, M.D. Lange, R. Sporken, and J.P. Faurie, Appl. Phys. Lett. 60, 1372 (1992).CrossRefGoogle Scholar
  14. 14.
    T. Sasaki, M. Tomono, and N. Oda, J. Vac. Sci. Technol. B 10, 1399 (1992).CrossRefGoogle Scholar
  15. 15.
    K. Shigenaka, K. Matsushita, L. Sugiura, F. Nakata, M. Uchikoshi, M. Nagashima, and H. Wada, J. Electron. Mater. 25, 1347 (1996).CrossRefGoogle Scholar
  16. 16.
    Q. Jiang, D.P. Haliday, B.K. Tanner, A.W. Brinkman, B.J. Cantwell, J.T. Mullins, and A. Basu, J. Phys. D Appl. Phys. 42, 012004 (2009).CrossRefGoogle Scholar
  17. 17.
    K. Shigenaka, L. Sugiura, F. Nakata, and K. Hirahara, J. Cryst. Growth 145, 376 (1994).CrossRefGoogle Scholar
  18. 18.
    Y. Yoshioka, K. Shimizu, K. Takagaki, and M. Kasuga, J. Cryst. Growth 217, 102 (2000).CrossRefGoogle Scholar
  19. 19.
    M.M. Rozhavskaya, W.V. Lundin, S.I. Troshkov, A.F. Tsatsulnikov, and V.G. Dubrovskii, Physica Status Solidi A 212, 851 (2015).CrossRefGoogle Scholar
  20. 20.
    Y. Yoshioka, H. Yoda, and M. Kasuga, J. Cryst. Growth 115, 705 (1991).CrossRefGoogle Scholar

Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.Department of Applied Chemistry, Graduate School of EngineeringTokyo University of Agriculture and TechnologyKoganeiJapan
  2. 2.R&TD Center, Tsukuba PlantMitsubishi Chemical CorporationUshikuJapan

Personalised recommendations