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Journal of Electronic Materials

, Volume 48, Issue 1, pp 454–459 | Cite as

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

  • Kenji IsoEmail author
  • Yuya Gokudan
  • Masumi Shiraishi
  • Minae Nishikado
  • Hisashi MurakamiEmail author
  • Akinori Koukitu
Article
  • 16 Downloads

Abstract

Single-crystalline CdTe films were grown in both (133) and (211) surface orientations on (211) Si substrates by vapor-phase epitaxy using metallic Cd source as a group-II precursor. The orientation of epitaxial films depended on the ratio of group-II and -VI precursors, i.e., II/VI. The orientation of epitaxial films was changed from (133) to (211) by increasing the II/VI under the CdTe growth condition. The surface morphology for (133) CdTe was smooth, whereas the surface for (211) CdTe was composed of hillocks with (111), (110), (101), and (100) facets. The full width at half maximum (FWHM) of the epitaxial films with the same thickness showed that the crystalline quality of (133) CdTe was better than that of (211) CdTe. The dependence of the orientation between (133) and (211) CdTe films on (211) Si substrates on the II/VI was explained by the difference between the step-flow growth on the step and the spontaneous nucleation on the terrace.

Keywords

CdTe vapor phase epitaxy twin II/VI metallic cadmium 

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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.Department of Applied Chemistry, Graduate School of EngineeringTokyo University of Agriculture and TechnologyKoganeiJapan
  2. 2.R&TD Center, Tsukuba PlantMitsubishi Chemical CorporationUshikuJapan

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