Inverse Magnetoresistance Characteristic of Hybrid-Type Multilayer Structure of IrMn-Based Giant-Magnetoresistance Spin Valve and High-Tc Superconductor YBa2Cu3O7−x Film
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An antiferromagnetic-IrMn-based giant-magnetoresistance spin-valve (GMR-SV) multilayer on a high-temperature superconductor YBa2Cu3O7−x (YBCO) film was prepared using an ion-beam deposition system. The exchange bias coupling field (Hex), coercivity (HC), and magnetoresistance ratio (MR (%)) of the hybrid YBCO/GMR-SV multilayer structure were measured and compared at room temperature and 77 K. The MR ratio (%) of the hybrid YBCO/GMR-SV structure measured by the four-probe method at 77 K was − 9.3%, different from that of the conventional GMR-SV structure. The phenomenon of a negative MR (%) below the critical temperature (Tc) can be explained by the current-in-plane tunneling effect, when the resistance of the middle gap (G) layer between the high-temperature superconductor YBCO and GMR-SV multilayer reaches a value comparable to the plane resistance of the upper metal layer. In order to analyze the inversed MR (%) of the hybrid YBCO/GMR-SV multilayer structure, the equivalent circuit for each layer was constructed and an equation of the output voltage was derived.
KeywordsInternal resistance spin-valve sensing current gap layer equivalent circuit
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This study was supported by the National Research Foundation of Korea (NRF), funded by the Korea Government (Ministry of Education) with the Grant No. NRF-2016R1D1A1B03936289.
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