Resistive Switching and Nonvolatile Memory in TiO2/CuPc Nanocomposite Devices
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An organic–inorganic nanocomposite has been prepared as a hybrid memory element, and a bistable data storage device has been fabricated. The composite device, consisting of a spin casted thin film of sol–gel derived titanium dioxide (TiO2) nanoparticles followed by a vacuum evaporated thin film of copper phthalocyanine (CuPc), exhibits conductance switching and nonvolatile memory phenomenon. While the single layer device with TiO2 nanoparticles showed unipolar switching characteristics, the composite device exhibited bipolar switching with highly improved performance. The erase/reset voltage for the single layer TiO2 device is 4.5 V, which reduces to |3| V for the composite device. The on/off current ratio of the composite device measured to be > 104 , which is orders of magnitude higher in comparison to that in the single layer devices. The charge transport mechanism of the devices revealed that trap-related space charge limited conduction mechanism might be responsible for the composite device while it indicates possible formation of filamentary path in the single layer TiO2 based devices leading to ohmic-like conduction. The ability of the composite device to write, erase, read, and refresh the electrical states fulfills the functionality of a dynamic random access memory having potential for next generation low cost memory applications.
KeywordsMemory bistability nanocomposite phthalocyanine random access memory
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Conflict of interest
The authors declare that they have no conflict of interest.
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