Journal of Electronic Materials

, Volume 48, Issue 3, pp 1498–1505 | Cite as

Development of UVB Radiation-Emitting Gd3+-Doped Na3YSi2O7 Host Material

  • Vijay SinghEmail author
  • N. Singh
  • M. S. Pathak
  • V. Natarajan


In this work, we synthesized and characterized a narrow-band, ultraviolet-emitting Na3YSi2O7:Gd3+ material. A series of Na3Y1−xSi2O7:Gdx (x = 0.01 ≤ x ≤ 0.11) samples were synthesized using a sol–gel process. X-ray diffraction patterns of all the samples were found to be similar to the hexagonal Na3YSi2O7 phase. Morphology and functional group analysis were performed using scanning electron microscopy and Fourier transform infrared spectroscopy. The effects of gadolinium concentration on the luminescence intensity of the Na3YSi2O7:Gd3+ samples were investigated. The developed sample exhibited an ultraviolet emission peaking at 313 nm under 273-nm excitation. The dominant band at 313 nm was attributed to 6P7/2 → 8S7/2 transition of Gd3+ ions. The electron paramagnetic resonance (EPR) studies revealed the presence of Gd3+ ions in octahedral Y3+ sites in the host lattice.


Sol–gel XRD EPR Gd3+ ions Na3YSi2O7 photoluminescence 


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This work was supported by the National Research Foundation of Korea (NRF) grant (2018M2B2A9065656) funded by the Korean Government (MSIT).


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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  • Vijay Singh
    • 1
    Email author
  • N. Singh
    • 1
  • M. S. Pathak
    • 1
  • V. Natarajan
    • 2
  1. 1.Department of Chemical EngineeringKonkuk UniversitySeoulKorea
  2. 2.Institute of Advanced ResearchGandhinagarIndia

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