Journal of Electronic Materials

, Volume 48, Issue 2, pp 1153–1158 | Cite as

Influence of Local Heterojunction on the Thermoelectric Properties of Mo-SnSe Multilayer Films Deposited by Magnetron Sputtering

  • Zi Jie Chen
  • Tong Shen
  • Raymond Kwesi Nutor
  • Shi Dan Yang
  • Hai Fei Wu
  • Jian Xiao SiEmail author


Mo-SnSe multilayer films were deposited by multi-step magnetron sputtering. The Mo-SnSe multilayer films are then annealed, and the new phases including SnSe2 and MoSe2 are observed by x-ray diffraction and Raman spectroscopy. Scanning electron microscopy reveals that the SnSe exhibits the columnar grain structure with sizes from 50–100 nm. The high-resolution transmission electron microscopy shows the SnSe2 is dispersed at the boundary of the columnar grain and the local MoSe2/SnSe heterojunction is formed in the interior of the columnar grain. The influence of Mo content on the thermoelectric properties of SnSe thin films was investigated. A maximum power factor of 0.44 μW cm−1 K−2 was obtained for a 2.6 at.% Mo-doped SnSe thin film at 576 K, which is higher than that of a SnSe thin film deposited under the same conditions.


SnSe films thermoelectric properties sputtering heterojunction 


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Conflict of interest

The authors declare that they have no conflict of interest.


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Copyright information

© The Minerals, Metals & Materials Society 2018

Authors and Affiliations

  1. 1.Department of PhysicsZhejiang Normal UniversityJinhuaPeople’s Republic of China
  2. 2.Department of PhysicsShaoxing UniversityShaoxingPeople’s Republic of China

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