Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device

  • Yupei Zhang (张玉佩)
  • Hua Wang (王华)Email author
  • Jiwen Xu
  • Zhida Li
  • Ling Yang
Advanced Materials


ZnMn2O4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn2O4/p+-Si structure was fabricated. The microstructure of ZnMn2O4 films and the resistive switching behavior of Ag/ZnMn2O4/p+-Si device were investigated. ZnMn2O4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn2O4/p+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state (HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state (LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.

Key words

ZnMn2O4 resistive switching behavior bipolar unipolar 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    Liu SQ, Wu NJ, Ignatiev A. Electric Pulse Induced Reversible Resistance Change Effect in Magneto Resistive Films[J]. Appl. Phys. Lett., 2000, 76: 2 749–2 751CrossRefGoogle Scholar
  2. [2]
    Waser R, Aono M. Nanoionics–based Resistive Switching Memories [J]. Nature, 2007, 6: 833–839CrossRefGoogle Scholar
  3. [3]
    Liu DQ, Wang NN, Wang G, et al. Nonvolatile Bipolar Resistive Switching in Amorphous Sr–doped LaMnO3 Thin Films Deposited by Radio Frequency Magnetron Sputtering[J]. Appl. Phys. Lett., 2013, 102: 134105–1–3CrossRefGoogle Scholar
  4. [4]
    Chen Q, Wang H, XU J, et al. Low Temperature Synthesis Amorphous La0.7Zn0.3MnO3 Films Grown on p+–Si Substrates and its Resistive Switching Properties[J]. J. Wuhan University of Technology–Materials Science, 2016, 31(4): 727–730CrossRefGoogle Scholar
  5. [5]
    Chang WY, Lai YC, Wu TB, et al. Unipolar Resistive Switching Characteristics of ZnO Thin Films for Nonvolatile Memory Applications[J]. Appl. Phys. Lett., 2008, 92: 022110–1–3CrossRefGoogle Scholar
  6. [6]
    Kukreja LM, Das AK, Misra P. Studies on Nonvolatile Resistance Memory Switching in ZnO Thin Films[J]. Bull. Master. Sci., 2009, 32: 247–252CrossRefGoogle Scholar
  7. [7]
    Chen X, Wu G, Jiang P, et al. Colossal Resistance Switching Effect in Pt/spinel–MgZnO/Pt Devices for Nonvolatile Memory Applications[J]. Appl. Phys. Lett., 2009, 94: 033501–1–3CrossRefGoogle Scholar
  8. [8]
    Waser R, Dittmann R, Staikov G, et al. Redox–based Resistive Switching Memories–Nanoionic Mechanisms, Prospects, and Challenges[J]. Adv. Mater., 2009, 21: 2 632–2 663CrossRefGoogle Scholar
  9. [9]
    Peng HY, Wu T. Nonvolatile Resistive Switching in Spinel ZnMn2O4 and Ilmenite ZnMnO3[J]. Appl. Phys. Lett., 2009, 95: 152106–1–3CrossRefGoogle Scholar
  10. [10]
    Wang H, Li Z, Xu J, et al. Resistance Switching Properties of Ag/ZnMn2O4/p–Si Fabricated by Magnetron Sputtering for Resistance Random Access Memory[J], J. Wuhan University of Technology–Materials Science, 2015, 30(6): 1 159–1 162CrossRefGoogle Scholar
  11. [11]
    Luo JM, Lin SP, Zheng Y, et al. Nonpolar Resistive Switching in Mndoped BiFeO3 Thin Films by Chemical Solution Deposition[J]. Appl. Phys. Lett., 2012, 101: 062902–1–3CrossRefGoogle Scholar
  12. [12]
    Ranjith R, Prellier W, Cheah JW, et al. Dc Leakage Behavior and Conduction Mechanism in (BiFeO3)m(SrTiO3)m Superlattices[J]. Appl. Phys. Lett., 2008, 92: 232905–1–3CrossRefGoogle Scholar
  13. [13]
    Li YT, Long SB, Liu Q, et al. An Overview of Resistive Random Access Memory Devices[J]. China. Sci. Bull., 2011, 56: 3 072–3 078CrossRefGoogle Scholar
  14. [14]
    Lee CB, Kang BS, Benayad A, et al. Effects of Metal Electrodes on the Resistive Memory Switching Property of NiO Thin Films[J]. Appl. Phys. Lett., 2008, 93: 042115–1–3CrossRefGoogle Scholar
  15. [15]
    Coey JMD, Venkatesan M, Fitzgerald CB. Donor Impurity Band Exchange in Dilute Ferromagnetic Oxides[J]. Nat. Mater., 2005, 4: 173–179CrossRefGoogle Scholar
  16. [16]
    Pan TM, Lu CH, Mondal S, et al. Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3–Based Metal–Insulator–Metal Memory Devices. IEEE Trans. Nanotechnol., 2012, 11: 1 040–1 046CrossRefGoogle Scholar

Copyright information

© Wuhan University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Yupei Zhang (张玉佩)
    • 1
  • Hua Wang (王华)
    • 1
    Email author
  • Jiwen Xu
    • 1
  • Zhida Li
    • 1
  • Ling Yang
    • 1
  1. 1.School of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilinChina

Personalised recommendations