In this work, we have successfully grown InGaN nanowires by catalyst-assisted chemical vapour deposition technique with high aspect ratio for solar-driven water splitting applications. The band gap of the InGaN nanowires has been tuned to absorb a wide range of visible parts of electromagnetic spectrum by optimizing the composition of In:Ga. The photoelectrochemical analysis has been carried out for InGaN nanowires and that evidences the significant solar oxygen evolution reaction with a small onset potential of 0.234 V vs. reversible hydrogen electrode. From the analysis, it has been witnessed the maximum applied bias to photo-conversion efficiency of ~ 1% at the applied bias of 0.63 V vs. reversible hydrogen electrode. Moreover, the ultra-long stability of InGaN nanowires has been evidenced by 3000 s with a flat current density of 0.43 mA/cm2 in chronoamperometry analysis.
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PSV would like to express his sincere gratitude to the College management for their financial support to develop a nanomaterials laboratory.
PSV would like to thank the Department of Science and Technology – Science and Engineering Research Board (DST - SERB), Govt. of India, for the financial support under the project (YSS/2015/000632) and also would like to acknowledge the University Grants Commission (UGC) for the financial assistance under the contract no. MRP-7036/16 (SERO/UGC).
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Venkatesh, P.S., Paulraj, G., Dharmaraj, P. et al. Catalyst-assisted growth of InGaN NWs for photoelectrochemical water-splitting applications. Ionics (2020). https://doi.org/10.1007/s11581-020-03488-7
- InGaN nanowires
- Hydrogen production
- Chemical vapour deposition
- Photoelectrochemical studies
- STH efficiency