Effect of Light Incident Angle on Fano Resonance Loss Mediation in Silver Nanoparticles Integrated Thin Silicon Wafers
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In this work, we have studied the role of light incidence angle in the suppression of Fano resonance loss for mediating broadband light incoupling. At light normal incidence angle, the transmission loss of silver nanoparticles (Ag NPs) integrated 100 μm silicon (Si) wafer is reduced to ~ 4 from ~ 11%, and total reflectance is reduced to 32.7 from 38.7%. The reduction in reflectance is observed only in surface plasmon off-resonance region of the NPs, but the reflectance is enhanced slightly in surface plasmon resonance (SPR) region. With the change in light incident angles, we have observed a reduction in reflectance from NPs integrated silicon wafer at SPR region. At 40° light incident angle, the reflectance is reduced to 21 from 38.7% due to minimization of the Fano resonance in SPR region of the NPs. The Fano resonance loss reduction is explained based on modification in NPs’ dipole and quadrupole modes hybridization at the silicon interface with different light incident angles instead of normal incidence. Experimental observations are validated by simulating Ag NPs’ near-fields and angular distribution of far-fields at the silicon interface, scattering efficiency spectra at different light incident angles by finite difference time domain calculations.
KeywordsThin silicon wafer Silver nanoparticles Fano resonance Plasmon mode hybridization
Piyush K. Parashar acknowledges MNRE, Govt. of India for fellowship, and the NRF of IIT Delhi for characterization of samples.
This work carried out under Clean Energy Research Initiative research grant RP03240 from Department of Science and Technology, Govt. of India.
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