Turning ZrTe5 into a semiconductor through atom intercalation

  • QiYuan Li
  • YangYang Lv
  • JingHui Wang
  • Song Bao
  • Wei Shi
  • Li Zhu
  • WeiMin Zhao
  • ChengLong Xue
  • ZhenYu Jia
  • LiBo Gao
  • YanBin Chen
  • JinSheng Wen
  • YanFeng Chen
  • ShaoChun LiEmail author


In this study we successfully intercalated potassium (K) atoms into single ZrTe5 crystals by liquid ammonia method, and found a semimetal-to-semiconductor transition at low temperatures in K-intercalated ZrTe5. As the K concentration increased, the resistance anomalous peak was gradually suppressed until finally disappearing. Whilst, the corresponding Hall resistance measurements consistently showed a sign reversal. The semimetal-to-semiconductor transition can be attributed to a lattice expansion induced by atom intercalation, leading to a larger energy band gap.


ZrTe5 atom intercalation topological insulator magnetoresistance Hall resistance 


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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • QiYuan Li
    • 1
  • YangYang Lv
    • 2
  • JingHui Wang
    • 1
  • Song Bao
    • 1
  • Wei Shi
    • 1
  • Li Zhu
    • 1
  • WeiMin Zhao
    • 1
  • ChengLong Xue
    • 1
  • ZhenYu Jia
    • 1
  • LiBo Gao
    • 1
    • 3
  • YanBin Chen
    • 1
    • 3
  • JinSheng Wen
    • 1
    • 3
  • YanFeng Chen
    • 2
    • 3
  • ShaoChun Li
    • 1
    • 3
    Email author
  1. 1.National Laboratory of Solid State Microstructures, School of PhysicsNanjing UniversityNanjingChina
  2. 2.National Laboratory of Solid State Microstructures, Department of Materials Science and EngineeringNanjing UniversityNanjingChina
  3. 3.Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingChina

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