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Investigation of NbOx-based volatile switching device with self-rectifying characteristics

  • Yichen Fang
  • Zongwei Wang
  • Caidie Cheng
  • Zhizhen Yu
  • Teng Zhang
  • Yuchao Yang
  • Yimao CaiEmail author
  • Ru Huang
Letter
  • 14 Downloads

Conclusion

The niobium oxide based nonlinear devices were fabricated and analyzed. The electrical tests present good control over device-to-device variation and stable endurance more than 106. The conduction mechanism was comprehensively discussed. The low-voltage region relates to SCLC, while Schottky and F-N tunneling are responsible for negative and positive high-voltage region respectively. Consequently, the volatile switching may originate from the capture and release of electrons by traps in SCLC mechanism, and this relaxation phenomenon is evaluated quantitatively.

Notes

Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61834001, 61574007, 61421005) and 111 Project (Grant No. B18001).

Supplementary material

11432_2019_9894_MOESM1_ESM.pdf (535 kb)
Investigation of NbOx-based volatile switching device with self-rectifying characteristics

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Yichen Fang
    • 1
  • Zongwei Wang
    • 1
  • Caidie Cheng
    • 1
  • Zhizhen Yu
    • 1
  • Teng Zhang
    • 1
  • Yuchao Yang
    • 1
  • Yimao Cai
    • 1
    Email author
  • Ru Huang
    • 1
  1. 1.Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of MicroelectronicsPeking UniversityBeijingChina

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