Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing

  • Runze Han
  • Peng Huang
  • Yudi Zhao
  • Xiaole Cui
  • Xiaoyan Liu
  • Jinfeng Kang
Research Paper


Crossbar architecture has been considered as an efficient means to execute a matrix-vector multiplication computation. An efficient evaluation model for this computation including the interconnect resistance effect on the high density resistive random access memmory (RRAM) crossbar array is proposed in this paper. The proposed model considers the interconnect resistance impacts on the columns and rows separately. The simulation results indicate that the computing speed of the proposed model can be boosted by over three orders of magnitude with the computation deviation of 7.7% in comparison with the precise comprehensive model in the 64 kb crossbar array fabricated at the 14 nm technology node. Based on the proposed evaluation model, the impacts of the parameters including nonlinearity and load resistance, on the computation are discussed along with solutions to improve the computational performance.


crossbar array evaluation model interconnect resistance matrix-vector multiplication RRAM 



This work was supported by National Natural Science Foundation of China (Grant Nos. 61334007, 61421005), and Shenzhen Science and Technology Innovation Committee (Grant No. JCYJ2017041215-0411676).


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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Institute of MicroelectronicsPeking UniversityBeijingChina
  2. 2.Key Lab of Integrated MicrosystemsPeking University Shenzhen Graduate SchoolShenzhenChina

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