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Wireless Personal Communications

, Volume 108, Issue 4, pp 2311–2339 | Cite as

Design of Novel SRAM Cell Using Hybrid VLSI Techniques for Low Leakage and High Speed in Embedded Memories

  • K. GavaskarEmail author
  • U. S. Ragupathy
  • V. Malini
Article

Abstract

Static or leakage power is the dominating component of total power dissipation in deep nanometer technologies below 90 nm, which has resulted in increase from 18% at 130 nm to 54% at 65 nm technology due to continued device and voltage scaling. Static random access memory (SRAM) is a type of RAM in which data is not written permanently and it does not need to be refreshed periodically. Different techniques have been applied to SRAM cell to reduce leakage power without affecting its performance. A novel 10T SRAM architecture is proposed in this paper which operates in three modes (active, park, standby or hold). The main objective of the proposed architecture is to provide better stability and reduced delay in active mode, reduced leakage current in standby mode and retaining the logic state in park mode. Design metrics such as static and dynamic power, delay, power delay product, energy, energy delay product, rise and fall time, slew rate and static noise margin are taken into account. All the circuits were designed using SYNOPSYS EDA tool and simulated in 30 nm technology. Simulation results shows that the proposed SRAM is much better than conventional and other SRAM cells designed using hybrid techniques.

Keywords

CMOS SRAM cell Low power High speed Subthreshold current 

Notes

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Kongu Engineering CollegePerundurai, ErodeIndia

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