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Wireless Personal Communications

, Volume 104, Issue 3, pp 1091–1107 | Cite as

Investigation of CMOS Based Integration Approach Using DAI Technique for Next Generation Wireless Networks

  • Gunjan Mittal Roy
  • Binod Kumar Kanuajia
  • Santanu Dwari
  • Sandeep KumarEmail author
  • Hanjung Song
Article
  • 41 Downloads

Abstract

This research work investigates a CMOS based low noise amplifier (LNA) using differential active inductor with eight-shaped patch antenna for next generation wireless communication. The proposed work conceded into three different phases. The first phase proposes LNA architecture which includes multistage cascode amplifier with a gate inductor gain peaking technique. The ground approach for this architecture employs active inductor technique that includes two stages of differential amplifier. The proposed novel technique leads to give incremental in inductance by using of common mode feedback resistor and lowers the undesirable parasitic resistance effect. Additionally, this technique offers gain enhanced noise cancellation and achieves a frequency band of around 5.7 GHz. The proposed architecture includes single stage differential AI and enhances the bandwidth up to 6.8 GHz with peak gain of 21 dB at 7.8 GHz. The noise figure and stability factor are achieved which is reasonably good at 1 dB. The proposed architecture is design and optimized on advanced design RF simulator using 0.045 µm CMOS process technology. While in second phase, a narrow band eight-shaped patch antenna is designed which provides operating band range from 5.8 to 6.5 GHz with 6.2 GHz resonating frequency. Highest peak gain of 15 dB and maximum radiation power of 42.5 dBm is succeed by proposed antenna. The final phase provides integration strategy of LNA with antenna and achieves desired gain of nearly 21 dB with minimum NF of 1.2–1.5 dB in the same band.

Keywords

Low noise amplifier (LNA) Differential active inductor (DAI) Patch antenna Complementary metal oxide semiconductor (CMOS) 

Notes

Acknowledgements

This work was supported by the Inje University Grant 2018.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Gunjan Mittal Roy
    • 1
  • Binod Kumar Kanuajia
    • 2
  • Santanu Dwari
    • 1
  • Sandeep Kumar
    • 3
    Email author
  • Hanjung Song
    • 4
  1. 1.Indian Institute of TechnologyDhanbadIndia
  2. 2.School of Computational and Integrative SciencesJNUNew DelhiIndia
  3. 3.Department of E & C Eng.National Institute of Technology KarnatakaSurathkal, MangaluruIndia
  4. 4.Department of Nano Science and Engineering, Centre for Nano ManufacturingInje UniversityGimhaeKorea

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