Photon-Drag Effect in p-Type Tellurium

  • R. Ya. RasulovEmail author
  • V. R. Rasulov
  • I. Eshboltaev
  • N. Z. Mamadalieva

The paper suggests spectral and temperature dependences of the light absorption coefficient and photon-drag effect in p-type tellurium exposed to linear polarized light. The photon momentum is considered both in the law of conservation of energy and the matrix element of optical transition between subbands of tellurium valence band. Photoelectric current is measured as time approximation of the hole momentum relaxation.


semiconductor polarized light optical transition holes photoelectric current tellurium 


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Authors and Affiliations

  • R. Ya. Rasulov
    • 1
    Email author
  • V. R. Rasulov
    • 1
  • I. Eshboltaev
    • 2
  • N. Z. Mamadalieva
    • 2
  1. 1.Fergana State UniversityFerganaRepublic of Uzbekistan
  2. 2.Kokand State Pedagogical InstituteKokandRepublic of Uzbekistan

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