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Schottky Diodes on Heterostructures with Two-Dimensional Electron Gas

  • A. Yu. YushchenkoEmail author
  • G. I. Ayzenshtat
  • F. I. Fedotova
PHYSICS OF SEMICONDUCTORS AND DIELECTRICS
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The results of studies of the characteristics of contacts with Schottky barriers on a pseudomorphic AlGaAs/InGaAs heterostructure are presented. The Ti-based Schottky diodes were created by a standard pHEMT technology. It is shown that the parameters of the fabricated contacts with Schottky barriers are close to the characteristics of ideal contacts based on aluminum or molybdenum created in the process of molecular beam epitaxy. It is also shown that as compared to the diodes based on AlGaAs homostructures, the measured Schottky barrier height is smaller and the ideality factor is higher in diodes created on pseudomorphic heterostructures. Along with the well-known methods for determining the Schottky-barrier height, we tested a technique based on the measurement of the threshold voltage in diodes with a two-dimensional electron gas.

Keywords

AlGaAs/InGaAs heterostructure pHEMT Schottky barrier height ideality factor two-dimensional electron gas 

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References

  1. 1.
    Yasuhiro Nakasha, Yoichi Kawano, Masaru Sato, et al., Fujitsu Sci. Tech. J., 43.4, 486–494 (2007).Google Scholar
  2. 2.
    Shinohara Keisuke and Matsui Toshiaki, J. National Institute of Inform. and Commun. Technol., 51, No. 1/2, 95–102 (2004).Google Scholar
  3. 3.
    Azlan Abdu I. Aziz and Mohamed Missous, Workshop EDMO, 297–302 (1997).Google Scholar
  4. 4.
    Hsien-Chin Chiu, Chih-Wei Yang, Chao-Hung Chen, et al., Microelectron. Reliability, 50, 847–850 (2010).CrossRefGoogle Scholar
  5. 5.
    T. Ytterdal, M. S. Shur, M. Hurt, and W. C. B. Peatman, Appl. Phys. Lett., 70, No. 4, 441–442 (1997).ADSCrossRefGoogle Scholar
  6. 6.
    M. Missou, W. S. Truscott, and K. E. Singer, J. Appl. Phys., 68, 2239 (1990).ADSCrossRefGoogle Scholar
  7. 7.
    L. Dobaczewski, J. M. Langer, and M. Missous, Proc. XXII Int. School of Semiconducting Compounds, Jaszowiec, 84, No. 4, 741–744 (1993).Google Scholar
  8. 8.
    K. Okamoto, C. E. C. Wood, and L. F. Eastman, Appl. Phys. Lett., No. 38, 636 (1981).Google Scholar
  9. 9.
    M. Eizenberg, M. Heiblum, M. I. Nathan, et al., J. Appl. Phys., 61, 1516 (1987).ADSCrossRefGoogle Scholar
  10. 10.
    D. H. Zhang, Mater. Sci. Eng., B60, 189–193 (1999).CrossRefGoogle Scholar
  11. 11.
    Lee Jin-Hee, Yoon Hyung-Sup, et al., ETRI J., 18, No. 3, 171–179 (1996).CrossRefGoogle Scholar
  12. 12.
    V. G. Bozhkov, Metal–Semiconductor Contacts: Physics and Models [in Russian], Publishing House of Tomsk State University, Tomsk (2016).Google Scholar
  13. 13.
    L. Gunter, D. Dugas, X. Yang, et al., CS MANTECH Conference, Vancouver (2006).Google Scholar
  14. 14.
    S. M. Sze, Physics of Semiconductor Devices, Second edition, Ch. 3, Wiley & Sons (1981).Google Scholar
  15. 15.
    http://www.ioffe.ru/NSM Archive Aluminium Gallium Arsenide (AlGaAs)-Band Structure and Carrier Concentration.
  16. 16.
    V. G. Bozhkov, Izv. Vyssh. Uchebn. Zaved. Radiofiz., 45, No. 5, 416–426 (2002).Google Scholar
  17. 17.
    Zhao Jun Lin, Wu Lu, Jaesun Lee, Dongmin Liu, et al., Appl. Phys. Lett., 82, No. 24, 4364–4365 (2003).ADSCrossRefGoogle Scholar
  18. 18.
    K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, IEEE Trans. Electron Dev., ED-30, No. 3, 207–212 (1983).ADSGoogle Scholar
  19. 19.
    Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, et al., Chin. Phys. B, 19, No. 9, 1–7 (2010).CrossRefGoogle Scholar
  20. 20.
    I. S. Vasil’evskii, A. N. Vinichenko, M. M. Grekhov, et al., Fiz. Tekh. Poluprovodn., 48, Vyp. 9, 1258–1264 (2014).Google Scholar
  21. 21.
    R. F. Broom, et al., J. Appl. Phys., 60, No. 5, 1832 (1986).ADSCrossRefGoogle Scholar
  22. 22.
    V. G. Bozhkov and A. V. Shmargunov, Proceed. 21-st International Crimean Conf. “Microwave Technology and Telecommunication Technologies”, Weber, Sevastopol, B. 1 (2011).Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • A. Yu. Yushchenko
    • 1
    Email author
  • G. I. Ayzenshtat
    • 1
  • F. I. Fedotova
    • 1
  1. 1.JSC “Research Institute of Semiconductor Devices”TomskRussia

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