Advertisement

Russian Physics Journal

, Volume 61, Issue 6, pp 1160–1166 | Cite as

Physical Properties of Solid Solutions InxAl1–xN

  • V. N. Brudnyi
  • M. D. Vilisova
  • L. É. Velikovskii
Article
  • 23 Downloads

The phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using the magnetron sputtering, molecular beam epitaxy, and metalorganic vapour-phase epitaxy technologies and intended for the production of ultrahigh-frequency InAlN/GaN HEMT transistors are analyzed.

Keywords

InxAl1–xN solid solutions phase diagrams preparation methods properties 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, et al., IEEE Electron Devices. 33, 988 (2012).ADSCrossRefGoogle Scholar
  2. 2.
    J. S. Xue, J. C. Zhang, Y. Hao, Jpn. Appl. Phys. Lett., 52, 08JB04 (2013).CrossRefGoogle Scholar
  3. 3.
    M. Gonschorek, J.-F. Carlin, E. Feltin, et al., Appl. Phys. Lett., 89, 062106 (2006).ADSCrossRefGoogle Scholar
  4. 4.
    A. Dadga, M. Neuburger, F. Schulze, et al., Phys. Stat. Sol. (a), 202, 832 (2005).ADSCrossRefGoogle Scholar
  5. 5.
    R. S. Pengelly, S. M. Wood, G. Milligan, IEEE Trans. Microwave Theory and Techniques, 60, 2187535 (2012).CrossRefGoogle Scholar
  6. 6.
    P. Murugapandiyan, S. Ravimaran, J. William, J. Science, Adv. Materials and Devices, 2, 515 (2012).CrossRefGoogle Scholar
  7. 7.
    H. Morkoc, Handbook of Nitride Semiconductors and Devices: V. 1. Materials Properties, Physics and Growth, V. 2. Electronic and Optical Process in Nitrides, Wiley-VCH, Verlag (2009).Google Scholar
  8. 8.
    S. Keller, S. P. DenBaars, J. Crystal Growth, 248, 479 (2003).ADSCrossRefGoogle Scholar
  9. 9.
    J. S. Xue, Y. Hao, X. W. Zhou, et al., J. Crystal Growth, 314, 359 (2011).ADSCrossRefGoogle Scholar
  10. 10.
    G. Zhao, X. Xu, H. Lii, et al., Scientific Reports, 6, 26600 (2016).ADSCrossRefGoogle Scholar
  11. 11.
    S. Karpov, N. Podolskaya, and I. Zhmakin, Phys. Rev. B, 70, 235203 (2004).ADSCrossRefGoogle Scholar
  12. 12.
    T. Takayama, M. Yuri, K. Itoh, and J. Harris, J. Appl. Phys., 90, 2358 (2001).ADSCrossRefGoogle Scholar
  13. 13.
    B. Burton, A. de Walle, and U. Kattner, J. Appl. Phys., 100, 113528 (2006).ADSCrossRefGoogle Scholar
  14. 14.
    J. Purton, M. Lavrentiev, N. Allan, Materials Chemistry and Physics, 105, 179 (2007). CrossRefGoogle Scholar
  15. 15.
    C. Hums, J. Bläsing, A. Dadgar, et al., Appl. Phys. Lett., 90, 022105 (2007).ADSCrossRefGoogle Scholar
  16. 16.
    R. Mohamad, A. Bere, J. Chen, P. Ruterana, Phys. Stat. Solidi, (a), 214, 1600752 (2017).ADSCrossRefGoogle Scholar
  17. 17.
    A. V. Voznyy, V. G. Deibuk, Semiconductors, 38, 304 (2004).ADSCrossRefGoogle Scholar
  18. 18.
    J. Wua, W. Walukiewicz, K. Yub, et al., Sol. State Commun., 127, 411 (2003).ADSCrossRefGoogle Scholar
  19. 19.
    H. He, Y. Cao, R. Fu, et al., Appl. Surf. Science, 256, 1812 (2010).ADSCrossRefGoogle Scholar
  20. 20.
    J. Mánuel, F. Morales, J. Lozano, et al., Acta Materialia, 58, 4120 (2010).CrossRefGoogle Scholar
  21. 21.
    S. Yamaguchi, M. Kariya, S. Nitta, et al., Appl. Phys. Let, 76, 876 (2000).ADSCrossRefGoogle Scholar
  22. 22.
    K. Lorenz, N. Franco, E. Alves, et al., J. Crystal Growth., 310, 4058 (2008).ADSCrossRefGoogle Scholar
  23. 23.
    T. Kang, M. Yamamoto, M. Tanaka, et al. J. Аppl. Phys., 106, 053525, (2009).ADSGoogle Scholar
  24. 24.
    A. V. Kondratyev, R. A. Talalaev, W. V. Lundin, et al., J. Crystal Growth., 272, 420 (2004).ADSCrossRefGoogle Scholar
  25. 25.
    M. E. Coltrin, J. R. Creighton, C. C. Mitchell, J. Crystal Growth, 287, 566 (2006).ADSCrossRefGoogle Scholar
  26. 26.
    S. Kret, A. Wolska, M. T. Klepka, et al., J. Physics: Conf. Series, 326, 012013 (2011).Google Scholar
  27. 27.
    A. Gadanecz, J. Bläsing, A. Dadgar, et al., Appl. Phys. Lett., 90, 221906 (2007).ADSCrossRefGoogle Scholar
  28. 28.
    Y. Taniyasu, J.-F.Carlin, A. Castiglia, et al., Appl. Phys. Lett., 101, 082113 (2012).ADSCrossRefGoogle Scholar
  29. 29.
    V. N Brudnyi, A. V. Kosobutsky, N. G Kolin, Russ. Phys. J., 51, 1270 (2008).CrossRefGoogle Scholar
  30. 30.
    V. N. Brudnyi, A. V. Kosobutsky, N. G. Kolin, Semiconductors, 43. 1271 (2009).ADSCrossRefGoogle Scholar
  31. 31.
    W. Walukiewicz, S. X. Li, J. Wu, et al., J. Crystal Growth., 269, 119 (2004).ADSCrossRefGoogle Scholar
  32. 32.
    H. Wang, D. S. Jiang, L. I. Wang, et al., J. Phys. D: Appl. Physics, 41, 133403 (2008).Google Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • V. N. Brudnyi
    • 1
  • M. D. Vilisova
    • 1
  • L. É. Velikovskii
    • 1
  1. 1.National Research Tomsk State UniversityTomskRussia

Personalised recommendations