Plasmon Thin Film Transistor Using Plasma Polymerized Aniline–Rubrene–Gold Nanocomposite in One-Step Process

  • Sweety Biswasi
  • Arup R. PalEmail author
Original Paper


Plasmon thin film transistor has great potential to be applied in present-day technologies including modern medical diagnostics. Here, we report the fabrication of plasmon thin film transistor, realized by depositing a nanocomposite material on a pre-fabricated transistor substrate. Plasma polymerized aniline rubrene hybrid semiconductor and gold nanoparticles are synthesized in a combined plasma process to form the nanocomposite material. Absorption spectra indicate that the polymer shows broad absorption in the UV–Visible region and inclusion of Gold nanoparticles (Au NPs) results in strongly enhanced absorption in the visible region of the electromagnetic spectrum due to plasmon resonance. The prepared thin film transistor device shows substantial increment of drain current when irradiated by a light source 520 nm, leading to significantly high responsivity and detectivity. The plasmon thin film transistor with enhanced photoresponse in the visible region can be a promising device for application in future technologies such as in the field of imaging, plasmonic integrated circuits, Human Machine Interfaces. It can also be used for varied medical applications e.g. biosensors and biomedical devices for personalized use.


Plasma polymerization Nanocomposite material Localized surface plasmon resonance Plasmonic device Phototransistor Enhanced responsivity 



This work is financially supported by the Institute of Advanced Study in Science and Technology, Guwahati, India. SB gratefully acknowledges the financial support from DST, Government of India through INSPIRE Fellowship (No. DST/INSPIRE Fellowship/2016/IF160292). Authors thank SAIF, CSIR-NEIST for providing the HRTEM and XPS facility. SB thanks Dr. Amreen Ara Hussain for discussion on XPS analysis.

Compliance with Ethical Standards

Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary material

11090_2019_10030_MOESM1_ESM.docx (1.5 mb)
Supplementary material 1 (DOCX 1570 kb)


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Physical Sciences DivisionInstitute of Advanced Study in Science and TechnologyGuwahatiIndia

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