Plasma Based Synthesis of Nanomaterials for Development of Plasmon Enhanced Infrared Responsive Optoelectronic Device
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We report plasma based fabrication of an optoelectronic device with plasmon enhanced infrared sensitivity realized by integrating plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix. A blend of plasma polymerized aniline (PPA)-Rubrene, prepared by a novel plasma based method acts as the semiconductor matrix for charge transport in the device geometry. Significantly improved photovoltaic property of the device with an open circuit voltage (VOC) of 1.08 V is obtained with the addition of Au NPs in the device. We experimentally demonstrate very efficient plasmon generated charge transfer between Au NPs and PPA-Rubrene system leading to significant enhancement of infrared responsivity of 2200% at the plasmon absorption band of Au. This study demonstrates how plasma based processes can be utilized to prepare plasmonic nano-materials and also to synthesize organic semiconductor materials suitable for development of plasmonic charge generating devices responsive to infrared region of the electromagnetic spectrum.
KeywordsPlasma process Surface plasmon Optoelectronic device Infrared responsive
This work is financially supported by the Institute of Advanced Study in Science and Technology, Guwahati, India. The authors are thankful to SAIF-NEHU, Shillong for providing the TEM and HRTEM characterization facility.
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Conflict of interest
The authors declare no competing financial interest.
- 15.Liu Y, Cheng R, Liao L, Zhou H, Bai J, Liu G, Liu L, Huang Y, Duan X (2011) Nat Commun 579:1589Google Scholar