Miniband formation engineering in GaN/AlN superlattices with constant total effective length
- 46 Downloads
In this work, we study the miniband formation procedure in GaN/AlN constant total effective length superlattices by means of the subband energy calculations. We calculate the transmission coefficients and miniband structures of the systems by means of the transfer matrix and finite difference methods, respectively. The miniband structures obtained by using these methods confirm each other. Here, we observe a nonlinear miniband gap behavior as the number of wells changes. Now, we can tune the width of each miniband and minigap by means of the number of wells and the total effective length of the system. By using the strategy of fixing the total length of the system and optimizing the number of layers inside it, we can find the same miniband widths as the usual superlattice (fixing the well width, not the total system length). However, in the earlier case (our proposal), fabrication of the device may need fewer amounts of the material and may lead to smaller device sizes, because we fixed the total system length.
KeywordsMiniband formation Superlattices Transfer matrix method Finite difference method Transmission coefficients
Authors are grateful for the Qom University of Technology and Shahrood University of Technology supports.
- Klos, J.W., Krawczyk, M.: Electronic miniband formation in a two-dimensional semiconductor superlattice. Mater. Sci. Pol. 26, 965–970 (2008)Google Scholar
- Saldana, X.I., Contreras-Solorio, D.A., Lopez-Cruz, E.: Self-similar optical properties in Pascal-type quasiperiodic dielectric multilayer. Rev. Mex. Fis. 53, 310–312 (2007)Google Scholar