Modification of the plasma-prepared As–Se–Te films and creation on their base the planar waveguides by continuous laser writing
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As a result of the previous experiments (Mochalov et al. in Opt Quant Electron 49(8):274:1–274:11, 2017), it was found that the Te-based chalcogenide films prepared by plasma deposition have a transparency window in the range from 1.2 to 20 μm and cannot be modified in the two-photon absorption mode, and in the linear absorption mode only the thermal effects were observed leading to crystallization of the films or their destruction. In this work, PECVD-prepared As–Se–Te films were modified by continuous laser irradiation of different wavelengths—473, 632.8 and 808 nm. For the modification, samples with compositions As40Se50Te10 and As40Se44Te16 were deposited on a substrate of epi-polished crystalline sapphire. This paper presents the results of studying of the effect of continuous laser radiation on the optical and structural properties of the chalcogenide films samples. Also, planar waveguided structures based on the As–Se–Te films were formed and investigated.
KeywordsArsenic selenide films Continuous laser writing Planar waveguides
The reported study was supported by the Ministry of Education and Science of the Russian Federation in the Framework of the Basic Part of the State Task, Project No. 4.6535.2017/8.9 The authors are especially grateful to the engineering and technical staff of the “Functional Nanomaterials Laboratory” of Lobachevsky State University of Nizhny Novgorod. The X-ray microanalysis and scanning electron microscopy were carried out on the equipment of the Collective Usage Center “New Materials and Resource-saving Technologies.” (Chemistry Research Institute of Lobachevsky State University of Nizhny Novgorod).
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