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Performance enhancement of UV quantum well light emitting diode through structure optimization

  • Shameem Ahmad
  • M. A. Raushan
  • Himanshu Gupta
  • Sandhya Kattayat
  • Shalendra Kumar
  • Saurabh Dalela
  • P. A. AlviEmail author
  • M. J. Siddiqui
Article
  • 49 Downloads

Abstract

In this paper, an extensive study is carried out via theoretical simulation to determine the electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet light emitting diodes (MQW-UV-LED) for the emission wavelength of 353 nm. The structure and characteristics of epitaxial layers used in UV-LEDs play a significant role in the performance of the device. We have studied dependence of device output characteristics on its layer structure and optimized the structure properties to improve the performance of the device. During the optimization process, thickness of quantum well layers, thickness of barrier layers, composition of electron blocking layer (EBL) and composition of barrier layer have been changed to their optimal values. In order to calculate the wavefunction, carrier densities, and discrete energy levels within the quantum well, a 6 × 6 Kohn–Luttinger Hamiltonian has been solved. A final structure with optimized values has been proposed in the end. The optimal values for quantum well thickness and barrier thickness are found to be 3.5 nm and 6 nm respectively. Optimum values from aluminium concentration in EBL and barriers are found to be 40% and 22% respectively. The output characteristics of the final device have been simulated and results are demonstrated. The performance of final device for varying temperature have also been simulated and displayed. The results achieved n this work may be beneficial to the entire opto-electronics community.

Keywords

UV-LED Efficiency droop Phosphor-less LEDs EBL LED simulations GaN LED 

Notes

Acknowledgements

Shameem Ahmad, M. A. Raushan and M. J. siddiqui are grateful to the UGC, Govt. of India, New Delhi, for providing support under the DSA-I grant. P. A. Alvi is thankful to DST, Government of India, New Delhi for providing support under CURIE programme to Banasthali Vidyapith.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Shameem Ahmad
    • 1
  • M. A. Raushan
    • 1
  • Himanshu Gupta
    • 2
  • Sandhya Kattayat
    • 3
  • Shalendra Kumar
    • 4
  • Saurabh Dalela
    • 5
  • P. A. Alvi
    • 2
    Email author
  • M. J. Siddiqui
    • 1
  1. 1.Department of Electronics Engineering, F/o Engineering and TechnologyAligarh Muslim UniversityAligarhIndia
  2. 2.Department of PhysicsBanasthali VidyapithBanasthaliIndia
  3. 3.Higher Colleges of TechnologyAbu DhabiUAE
  4. 4.Electronic Materials and Nanomagnetism Lab, Department of Applied Physics, Amity School of Applied SciencesAmity University HaryanaGurgaonIndia
  5. 5.Department of Pure and Applied PhysicsUniversity of KotaKotaIndia

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