Comparative analysis of silicon and black phosphorous as an add-layer in nanomaterial based plasmonic sensor
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In the proposed article silicon and black phosphorous as an add-layer above the plasmonic metal in nanomaterial (graphene and MoS2) based plasmonic sensor are compared. The reflectance curves are obtained for different thickness of silicon and black phosphorous by using transfer matrix method. The performance defining parameters i.e. shift in resonance angle, beam width of reflectance curve, and minimum reflectance intensity for a minute change of 0.005 in refractive index of sensing medium at the optimized thickness 5 nm of silicon and black-phosphorous, and conventional are (13.86, 10.96, 2.415), (4.956, 3.817, 1.419), and (0.012, 0.002, 0.002) respectively. Further, the addition of nanomaterials increases these parameters and generally follows the order MoS2-graphene > MoS2 > graphene. Furthermore, transverse-magnetic electric field shows that nanomaterial covered silicon have higher penetration depth than the nanomaterial covered black-phosphorous. The analysis shows that nanomaterial covered silicon can replace nanomaterial covered black-phosphorous in terms of higher sensitivity and penetration depth.
KeywordsSPR sensor Black phosphorous Graphene MoS2 Silicon
This work is partially supported under Project No. 34/14/10/2017-BRNS/34285 by Board of Research in Nuclear Sciences (BRNS), Department of Atomic Energy (DAE), Government of India.
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