The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions
- 29 Downloads
In this article the impacts of quantum efficiency and bandwidth of PIN photodiodes under non-uniform illumination conditions are investigated. An absorption region is divided into the number of arbitrary layers and the continuity equations for each layer are solved with assuming that the carrier’s drift velocity is constant in each layer. Also the impact of transit time and capacitive effects of bandwidth were studied with considering the bias voltage, width of absorption region and temperature. The results show that with considering the capacitive effects, the bandwidth is increased by increase in temperature and bias voltage. We observe the effect of incident optical radiation from two n and p sides and also its impact on bandwidth and quantum efficiency. The results show more impact of radiation from n region compared to p region.
KeywordsPIN photodiode Bandwidth Quantum efficiency Capacitive effect Temperature
- Fernandes, C.M.C., Pereira, J.M.T.: Bandwidth modeling and optimization of PIN photodiodes. In: 2011 IEEE international conference on computer as a tool (EUROCON), pp. 1–4. Lisbon (2011)Google Scholar
- Pereira, J.T.: The effect of temperature on the frequency response of p–i–n photodiodes for optical communications. In: Proceedings of conference on telecommunications—ConfTele, vol. 1, pp. 141–144. Santa Maria da Feira, Portugal (2009)Google Scholar
- Verónica Matos, J.P.: Numerical analysis and optimization of resonant cavity-enhanced p–i–n photodiodes. In: Proceedings of WSEAS international multiconference on circuits, systems, communications and computers—CSCC, vol. 1, pp. 62–68. Lisbon, Portugal (2014)Google Scholar