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The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions

  • Roshanak Alizade
  • Abbas GhadimiEmail author
Article
  • 45 Downloads

Abstract

In this article the impacts of quantum efficiency and bandwidth of PIN photodiodes under non-uniform illumination conditions are investigated. An absorption region is divided into the number of arbitrary layers and the continuity equations for each layer are solved with assuming that the carrier’s drift velocity is constant in each layer. Also the impact of transit time and capacitive effects of bandwidth were studied with considering the bias voltage, width of absorption region and temperature. The results show that with considering the capacitive effects, the bandwidth is increased by increase in temperature and bias voltage. We observe the effect of incident optical radiation from two n and p sides and also its impact on bandwidth and quantum efficiency. The results show more impact of radiation from n region compared to p region.

Keywords

PIN photodiode Bandwidth Quantum efficiency Capacitive effect Temperature 

References

  1. Chen ShuoFu, L.L., Hao, W.U., LiXian, W.A.N.G., JianHong, K.E., Wei, L.I., Liang, X.I.E., NingHua, Z.H.U.: A comprehensive consideration of bias voltage and temperature to extract the intrinsic frequency response of photodiodes. Sci. Bull. Springer 55, 3727–3733 (2010)CrossRefGoogle Scholar
  2. Dentan, M., de Cremoux, B.: Numerical simulation of the nonlinear response of a p–i–n photodiode under high illumination. J. Lightwave Technol. 8, 1137–1144 (1990)CrossRefADSGoogle Scholar
  3. Fengnian Xia, J.W., Menon, V., Forrest, S.R.: Monolithic integration of a semiconductor optical amplifier and a high bandwidth p–i–n photodiode using asymmetric twin-waveguide technology. IEEE Photonics Technol. Lett. 15, 452–454 (2003)CrossRefADSGoogle Scholar
  4. Fernandes, C.M.C., Pereira, J.M.T.: Bandwidth modeling and optimization of PIN photodiodes. In: 2011 IEEE international conference on computer as a tool (EUROCON), pp. 1–4. Lisbon (2011)Google Scholar
  5. Jervase, H.B.J.A.: Optimization procedure for the design of ultrafast, highly efficient and selective resonant cavity enhanced Schottky photodiodes. IEEE Trans. Electron Devices 47, 1158–1165 (2000)CrossRefADSGoogle Scholar
  6. Pereira, J.M.T.: Modelling the frequency response of p + InP/n-InGaAs/n + InP photodiodes with an arbitrary electric field profile. COMPEL Int. J. Comput. Math. Electr. Electron. Eng. 26, 1114–1122 (2007)CrossRefGoogle Scholar
  7. Pereira, J.T.: The effect of temperature on the frequency response of p–i–n photodiodes for optical communications. In: Proceedings of conference on telecommunications—ConfTele, vol. 1, pp. 141–144. Santa Maria da Feira, Portugal (2009)Google Scholar
  8. Torres Pereira, J.M., Torres, J.P.N.: Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes. Photonic Sens. 6, 63–70 (2016)CrossRefADSGoogle Scholar
  9. Verónica Matos, J.P.: Numerical analysis and optimization of resonant cavity-enhanced p–i–n photodiodes. In: Proceedings of WSEAS international multiconference on circuits, systems, communications and computers—CSCC, vol. 1, pp. 62–68. Lisbon, Portugal (2014)Google Scholar
  10. Yih-Guei Wey, K.G., Bowers, J., Rodwell, M., Silvestre, P., Thiagarajan, P., Robinson, G.: 110-GHz GalnAslInP double heterostructure p–i–n photo detectors. Lightwave Technol. 13, 1490–1499 (1995)CrossRefADSGoogle Scholar

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Electrical Engineering, Rasht BranchIslamic Azad UniversityRashtIran
  2. 2.Department of Electrical Engineering, Lahijan BranchIslamic Azad UniversityLahijanIran

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