Advertisement

Determining junction temperature based on material properties and geometric structures of LEDs

  • Ching-Yen Ho
  • Song-Feng Wan
  • Bor-Chyuan Chen
  • Long-Gen Li
  • Si-Li Fan
  • Chang-Wei Xiong
Article
  • 54 Downloads
Part of the following topical collections:
  1. Optics in Materials, Energy and Related Technologies 2018

Abstract

Based on the material properties and geometric structures of LEDs, this paper proposes an analytical model for predicting the junction temperature. The parameters relevant to the junction temperature are calculated using the material properties and geometric structures of LEDs. The junction temperature of AlGaInP LED predicted from this work agrees with the available experimental data. Effects of LED working parameters and material properties on the junction temperatures are discussed in this study.

Keywords

LED Material properties Geometric structures Junction temperature 

Notes

Acknowledgements

Support for this work by ministry of science and technology under Grant No. MOST 106-2221-E-146-006-, Guangdong educational department of scientific research project with Grant No. 2017GKTSCX105, Dongguan Polytechnic scientific research fund through Grant No. 2017a04, and Dongguan Polytechnic quality engineering Project under No. JGZD201826 is gratefully acknowledged.

References

  1. Chen, K., Narendran, N.: Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. Microelectron. Reliab. 53, 701–705 (2013)CrossRefGoogle Scholar
  2. Chen, B.C., Chen, K.H., Yu, J.W., Ho, C.Y., Wen, M.Y.: Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes. Opt. Quant. Electron. 49, 183 (2017)CrossRefGoogle Scholar
  3. Chhajed, S., Xi, Y., Gessmann, Th., Xi, J.Q., Shah, J.M., Kim, J.K., Schubert, E.F.: Junction temperature in light-emitting diodes assessed by different methods. In: Progress in Biomedical Optics and Imaging—Proceedings of SPIE, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, vol. 5739, pp. 16–24 (2005) Google Scholar
  4. Eugene, H., Nadarajah, N.: A method for projecting useful life of LED lighting systems. Proc. Soc. Photo Opt. Inst. Eng. 5187, 93–99 (2004)Google Scholar
  5. Feng, R., Jie, G., Hao, X.: Determining the junction temperature of GaN-based blue LED with the double spectral parameter. J. Optoelectron. Laser 26, 2083–2088 (2015)Google Scholar
  6. Fischer, A.J., Allerman, A.A., Crawford, M.H., Bogart, K.H.A., Lee, S.R., Kaplar, R.J., Chow, W.W., Kurtz, S.R., Fullmer, K.W., Figiel, J.J.: Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels. Appl. Phys. Lett. 84, 3394–3396 (2004)ADSCrossRefGoogle Scholar
  7. Hu, J., Yang, L., Shin, M.W.: Mechanism and thermal effect of delamination in light-emitting diode packages. Microelectron. J. 38, 157–163 (2007)CrossRefGoogle Scholar
  8. Keppens, A., Ryckaert, W.R., Deconinck, G., Hanselaer, P.: Modeling high power light-emitting diode spectra and their variation with junction temperature. J. Appl. Phys. 108, 043104 (2010)ADSCrossRefGoogle Scholar
  9. Kim, D.S., Han, B.: Effect of junction temperature on heat dissipation of high power light emitting diodes. J. Appl. Phys. 119, 125104 (2016)ADSCrossRefGoogle Scholar
  10. Lee, Y.J., Lee, C.J., Chen, C.H.: Determination of junction temperature in InGaN and AlGaInP light-emitting diodes. IEEE J. Quantum Electron. 46, 1450–1455 (2010)ADSCrossRefGoogle Scholar
  11. Lee, H.K., Lee, D.H., Song, Y.M., Lee, Y.T., Yu, J.S.: Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses. Solid State Electron. 56, 79–84 (2011)ADSCrossRefGoogle Scholar
  12. Liu, D., Yang, H., Yang, P.: Experimental and numerical approach on junction temperature of high-power LED. Microelectron. Reliab. 54, 926–931 (2014)CrossRefGoogle Scholar
  13. Nepal, N., Li, J., Nakarmi, M.L., Lin, J.Y., Jianga, H.X.: Temperature and compositional dependence of the energy band gap of AlGaN alloys. Appl. Phys. Lett. 87, 242104 (2005)ADSCrossRefGoogle Scholar
  14. Ochoa-Martínez, E., Barrutia, L., Ochoa, M., Barrigón, E., Carcía, I., Rey-Stolle, I., Algora, C., Basa, P., Kronome, G., Gabás, M.: Refractive indexes and extinction coefficients of n-and p-type doped GaInP, AlInP and AlGaInP for multi junction solar cells. Sol. Energy Mater. Sol. Cells 174, 388–396 (2018)CrossRefGoogle Scholar
  15. Ozuturk, E.: Voltage–current characteristic of LED according to some optical and thermal parameters at pulsed high currents. Optik Int. J. Light Electron Opt. 126, 3215–3217 (2015)CrossRefGoogle Scholar
  16. Xi, Y., Schubert, E.F.: Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Int. J. High Speed Electron. Syst. 14, 708–713 (2004)CrossRefGoogle Scholar
  17. Xi, Y., Xi, J.Q., Gessmann, Th, Shah, J.M., Kim, J.K., Schubert, E.F., Fischer, A.J., Crawford, M.H., Bogart, K.H.A., Allerman, A.A.: Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods. Appl. Phys. Lett. 86, 031907 (2005a)ADSCrossRefGoogle Scholar
  18. Xi, Y., Gessmann, Th, Xi, J.Q., Kim, J.K., Shah, J.M., Schubert, E.F., Fischer, A.J., Crawford, M.H., Bogart, K.H.A., Allerman, A.A.: Junction temperature in ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 44, 7260–7266 (2005b)ADSCrossRefGoogle Scholar
  19. Ye, P.D., Yang, B., Ng, K.K., Bude, J., Wilk, G.D., Halder, S., Hwang, J.C.M.: GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric. Appl. Phys. Lett. 86, 063501 (2005)ADSCrossRefGoogle Scholar
  20. Yung, K.C., Liem, H., Choy, H.S., Cai, Z.X.: Thermal investigation of a high brightness LED array package assembly for various placement algorithms. Appl. Therm. Eng. 63, 105–118 (2014)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Ching-Yen Ho
    • 1
    • 2
  • Song-Feng Wan
    • 1
  • Bor-Chyuan Chen
    • 3
  • Long-Gen Li
    • 1
  • Si-Li Fan
    • 1
  • Chang-Wei Xiong
    • 1
  1. 1.Department of Mechanical and Electrical EngineeringDongguan PolytechnicDongguanChina
  2. 2.Department of Mechanical EngineeringHwa Hsia University of TechnologyTaipeiTaiwan, ROC
  3. 3.Department of Chinese MedicineBuddhist Dalin Tzu Chi General HospitalChiayiTaiwan, ROC

Personalised recommendations