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Resistive switching characteristics of Pt/Nb:SrTiO3/LaNiO3 heterostructure

  • Jiqiang JiaEmail author
  • Jianhua Gao
  • Yang Ren
  • Gaoyang Zhao
Original Paper: Sol-gel and hybrid materials for dielectric, electronic, magnetic and ferroelectric applications
  • 30 Downloads

Abstract

Herein, Pt/Nb:SrTiO3/LaNiO3(Pt/NSTO/LNO) heterostructures are prepared by the sol–gel method, and the resistive switching (RS) characteristics of NSTO films are studied under different preparation conditions and Nb-doping content. It is shown from SEM images that the grain size of NSTO decreases with the increase of Nb-doping content. It is observed from electrical tests and analysis that the RS phenomenon of the Pt/NSTO/LNO structure can be attributed to the migration of internal oxygen vacancies, which are formed during the material preparation. J–V curves of Pt/NSTO/LNO, prepared under different heat treatment atmospheres, exhibit that pure nitrogen atmosphere results in optimal RS performance. In addition, the RS performance has shown an increasing trend with Nb content up to a threshold limit, followed by a gradual decrease. Furthermore, the RS performance of Pt/NSTO/LNO, prepared at different heat treatment temperatures, was investigated. The results demonstrate that the hysteresis window of RS for the Pt/NSTO/LNO structure first increased with increasing temperature, followed by a decrease. Moreover, the optimal RS performance is achieved at the heat treatment temperature of 700 °C.

Highlights

  • All sol-gel process prepared the heteroepitaxial Nb:SrTiO3/LaNiO3 bilayer.

  • The resistive switching characteristics of the Pt/Nb:SrTiO3/LaNiO3 are studied under different preparation conditions and Nb doping content.

  • The effect mechanism of oxygen vacancies on the resistive switching characteristics of the Pt/Nb:SrTiO3/LaNiO3 is analyzed.

Keywords

Sol–gel J–V curves Resistive switching 

Notes

Acknowledgements

This project is funded by China Postdoctoral Science Fundation (No. 2018M643696), Special Scientific Research Project of Shaanxi Provincial Department of Education (19JK0567), and the National Natural Science Foundation of China (No. 51672212 and 51802260).

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Jiqiang Jia
    • 1
    Email author
  • Jianhua Gao
    • 2
  • Yang Ren
    • 1
  • Gaoyang Zhao
    • 1
    • 2
  1. 1.Advanced Materials Analysis and Test CenterXi’an University of TechnologyXi’anChina
  2. 2.School of Materials Science and EngineeringXi’an University of TechnologyXi’anChina

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