Resistive switching IGZO micro-arrays realized through UV assisted photochemical solution method
- 96 Downloads
A low-cost and facile two-step UV photolysis method was used to prepare the InGaZnO (IGZO) resistive switching films and micro-arrays. Using benzoylacetone (BzAc) as the complexing agent, we synthesized a unique IGZO solution sensitive to the UV light of 328 nm. We found that high-performance resistive switching IGZO amorphous films could be obtained by UV irradiation (325~365 nm) at room temperature (first step), and further exposure to deep UV light of 185 and 254 nm at 150 °C (second step). We found that the first and the second steps of the UV soaking play different roles in the formation process of amorphous IGZO films. Combined with the rinsing process, patterned IGZO micro-arrays acting as memristive units were also obtained using this two-step UV photolysis process. The IGZO micro-arrays with a high ratio of 104 of on-state and off-state resistance were obtained.
A novel two-step photolysis solution method was developed to prepare IGZO arrays.
The UV irradiation under light of 325~365 nm produced the IGZO gel film arrays.
The irradiation under deep UV light enhanced the resistive switching properties of the IGZO films.
KeywordsResistive switching Memristive IGZO UV irradiation
This work was supported by the Foundation of Science and Technology of Shaanxi Province (No. 2013KJXX-36).
Compliance with ethical standards
Conflict of interest
The authors declare that they have no conflict of interest.
- 11.Chen H-Y, Brivio S, Chang C-C, Frascaroli J, Hou T-H, Hudec B, Liu M, Lv H, Molas G, Sohn J, Spiga S, Teja VM, Vianello E, Philip Wong H-S (2017) Resistive random access memory (RRAM) technology: from material, device, selector, 3D integration to bottom-up fabrication. J Electroceram 39:21–38CrossRefGoogle Scholar
- 15.Chen Y, Li L, Yin X, Yerramilli A, Shen Y, Song Y, Bian W, Li N, Zhao Z, Qu Wen N, David Theodore ND, Alford TL (2017) Resistive switching characteristics of flexible TiO2 thin film fabricated by deep ultraviolet photochemical solution method. IEEE Electron Device Lett 38:1528–1531CrossRefGoogle Scholar