Valley Hall Effect and Magnetic Moment in Magnetized Silicene

  • Sake WangEmail author
  • Pengzhan Zhang
  • Chongdan Ren
  • Hongyu Tian
  • Juan Pang
  • Chi Song
  • Minglei SunEmail author
Original Paper


We investigate the physical properties of silicene with both staggered sublattice potential and magnetization by using Kubo formalism, the latter arises from the magnetic proximity effect by depositing Fe atoms to silicene or depositing silicene on an appropriate ferromagnetic insulator. Based on the low-energy continuum model of the system where inversion symmetry is broken, we show that the system exhibits spin half metal state when staggered sublattice potential is in the same magnitude with mean and staggered magnetization. Besides, Hall conductivity and magnetic moment are all valley dependent, so we investigate the valley Hall effect of the system further by considering magnetization exclusively. This means carriers in different valleys turning into opposite directions transverse to an in-plane electric field. At last, we prove these results by investigating Berry curvature that characterizing Hall transport, which is also valley dependent. These effects can be used to generate valley-polarized currents solely by magnetization, forming the basis for the valley-based electronics applications.


Silicene Valleytronics Magnetization Valley Hall effect Kubo formula Magnetic moment 


Funding Information

This study was funded by the National Natural Science Foundation of China (grant numbers 11704165, 11864047, and 21702082), the National Science Foundation for Post-doctoral Scientists of China (grant number 2017M621711), the Major Research Project for Innovative Group of Education Department of Guizhou Province (grant number KY[2018]028), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (grant number 17KJB140008), and the Science Foundation of Jinling Institute of Technology (grant numbers 40620062 and 40620064).


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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.College of ScienceJinling Institute of TechnologyNanjingChina
  2. 2.College of Electronic and Information EngineeringJinling Institute of TechnologyNanjingChina
  3. 3.School of Physics and Electronic ScienceZunyi Normal UniversityZunyiChina
  4. 4.School of Physics and Electronic EngineeringLinyi UniversityLinyiChina
  5. 5.College of Material EngineeringJinling Institute of TechnologyNanjingChina
  6. 6.Physical Science and Engineering DivisionKing Abdullah University of Science and TechnologyThuwalSaudi Arabia

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