The Effect of Functionalization on Spin-Polarized Transport of Gallium Nitride–Based Magnetic Tunnel Junctions
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Using first-principles spin-polarized density functional theory computations, the effect of functionalization (fluorination and hydrogenation) on spin-polarized transport of gallium nitride (GaN) nanosheet–based magnetic tunnel junction (MTJ) with CrO2 as electrodes is investigated. The results show fluorinated GaN–based structure exhibits better spin filtration and high TMR (maximum ~ 99%), as compared with hydrogenated GaN (maximum TMR ~ 93%)– and pristine GaN (maximum TMR ~ 83%)–based structures. In addition, fluorinated GaN nanosheet exhibits a ferromagnetic behavior with a magnetic movement of 1.0 μb per fluorine atom. The magnetic movements for pristine GaN and hydrogenated GaN sheets are reported to be 0 μb and 0.9 μb per hydrogen atom, respectively. Higher TMR, better spin filtration, and ferromagnetic behavior for fluorinated GaN–based structure open up its possibility as spin filter (injector) in MTJs and other spin-based devices.
KeywordsGallium nitride (GaN) MTJ TMR Spin injection efficiency DOS FM (ferromagnetic) Adsorption Band structure HMF (half-metal ferromagnetic)
The authors would like to thank the National Institute of Technology, Kurukshetra, and the Department of Electronics & Communication Engineering for providing the computational tools and other resources for carrying out this research work. We also thank Dr. Sudhanshu Choudhary for his fruitful discussion.
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