Correction to: High-Voltage Superconducting Fault Current Limiters Based on High-Diffusivity Dielectric Substrates
Correction to: J Supercond Nov Magn (2018) 31:1961–1963
The original version of this article contains the following mistakes:
On the second page 1st paragraph under heading “The Role of the Substrate Diffusivity” second and third sentences, 90 K, 300 cm2/s and 5 mm, should be replaced with 65 K, 100 cm2/s and 3 mm, respectively . Still on the same page, under heading “Maximum Power”, 0.5 cm and 15,000 W/cm2 should be replaced with 0.3 cm and 9000 W/cm2, respectively. Corrected sentences should read:
At 65 K, the critical temperature of the HTS layer, its value is about 100 cm2/s. If a hot spot develops because of the presence of some defect in the HTS layer, within 1 ms, the temperature increase of the substrate is smoothed out over the length scale δ = 3 mm, which is of the order of a typical tape width.
Taking a value of 1 J/cm3, and δ = 0.3 cm, we get a maximum power of 9000 W/cm2.
Also, on the third page last sentence under heading “Shunt Optimization for Achieving Highest Possible Electric Field”, 5 kV/m should be replaced with 3 kV/m. Corrected sentence should read:
For a critical current of 300 A/cm-w, the maximum electric field that can be achieved will be 3 kV/m for a sapphire- based tape and 130 V/m for a Hastelloy-based tape.
The original article has been corrected.