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Journal of Russian Laser Research

, Volume 40, Issue 3, pp 269–273 | Cite as

Resonance Raman Scattering Spectroscopy of Four-Monolayer Thick MoS2 Films

  • V. S. Bagaev
  • V. S. Krivobok
  • S. N. NikolaevEmail author
  • M. A. Chernopitssky
  • K. A. Savin
Article
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Abstract

We studied the Raman scattering in bulk and four-monolayer thick MoS2 films under the resonance laser excitation of A, B, and C excitons. We demonstrate the fine structure agility of a phonon mode associated with out-of-plane vibration of sulfur atoms (A1g) when passing from bulk to atomically thin film. The C exciton resonance excitation allows us to register the line corresponding to optical-phonon (E1g) scattering and the set of peaks with a 660 – 740 cm1 Stokes shift associated with resonance scattering by two optical (Eu) phonons.

Keywords

transition metal dichalcogenides Raman scattering exciton 

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • V. S. Bagaev
    • 1
  • V. S. Krivobok
    • 1
  • S. N. Nikolaev
    • 1
    Email author
  • M. A. Chernopitssky
    • 1
  • K. A. Savin
    • 1
  1. 1.Lebedev Physical Institute, Russian Academy of SciencesMoscowRussia

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