Passively Q-Switched Mode-Locking Nd:(Gd0.3Y0.7)2SiO5 Laser Based on Semiconductor Saturable Absorber Mirror

  • Zhen Tian
  • Beibei Wang
  • Congcong Gao
  • Qiang Wu
  • Xiaodong Xu
  • Jun Xu
  • Bingyuan ZhangEmail author


A diode-end-pumped continuous-wave and passively Q-switched mode-locked Nd:(Gd0.3Y0.7)2SiO5 laser was designed. At a pump power of 0.8W, we achieve dual-wavelength continuous-wave (CW) laser generation at wavelengths around 1,073.26 and 1,076.62 nm. Using a semiconductor saturable absorber mirror (SESAM), we obtain passively Q-switched mode-locked (QML) operation. A maximum average output power of 171 mW is obtained under a pump power of 5 W. The optical conversion efficiency for the QML laser is 3.4%. The duration of the mode-locked pulse is estimated to be about 649 ps at a repetition rate of 101.34 MHz.


Nd:(Gd0.3Y0.7)2SiO5 semiconductor saturable absorber mirror passively Q-switched mode locking 


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Zhen Tian
    • 1
    • 2
  • Beibei Wang
    • 1
  • Congcong Gao
    • 1
  • Qiang Wu
    • 2
  • Xiaodong Xu
    • 3
  • Jun Xu
    • 4
  • Bingyuan Zhang
    • 1
    Email author
  1. 1.School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and TechnologyLiaocheng UniversityLiaochengChina
  2. 2.State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijingChina
  3. 3.Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic EngineeringJiangsu Normal UniversityXuzhouChina
  4. 4.School of Physics Science and Engineering, Institute for Advanced StudyTongji UniversityShanghaiChina

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