Advertisement

Journal of Low Temperature Physics

, Volume 193, Issue 3–4, pp 415–421 | Cite as

Characterization of Doped Silicon Thermometers for Very High Sensitivity Cryogenic Bolometers

  • Obaïd-Allah Adami
  • Louis Rodriguez
  • Vincent Reveret
  • Abdelkader Aliane
  • Albrecht Poglitsch
  • Jean-Luc Sauvageot
  • Sophie Bounissou
  • Valérie Goudon
  • Laurent Dussopt
Article

Abstract

Understanding the origin and early evolution of stars is one of the fundamental objectives of astronomy. This can be possible with observations made from space in the mid- to far-infrared and millimeter-wave part of the spectrum which require detectors with very high sensitivity. In the framework of the SPICA project and the course of developing cooled semiconductor bolometers for sub-millimeter-wave detection, typically 100 μm ≤ λ ≤ 1.5 mm, we have investigated several thermometers based on doped silicon Si:P,B. We observed an important dependence of the Si:P,B resistance to the doping densities and found potential thermometers for cryogenic detections at very low temperatures (50 mK < T < 100 mK). In addition, numerical simulations allowed us to study the thermoelectrical behavior of the potential detectors and predict a clear enhancement of the detector performances.

Keywords

Doped silicon Far-infrared Cryogenic detector 

Notes

Acknowledgements

This work has been partially supported by the LabEx FOCUS ANR-11-LABX-0013.

References

  1. 1.
  2. 2.
    A. Aliane, M. Solana, W. Rabaud, L. Saminadayar, P. Agnese, V. Goudon, L. Dussopt, C. Vialle, E. Baghe, S. Pocas, L. Carle, N.L.S. Shun, S. Becker, V. Reveret, L. Rodriguez, A. Hamelin, A. Poglitsch, S. Bounissou, O.-A. Adami, J. Low Temp. Phys. (2018).  https://doi.org/10.1007/s10909-018-1919-y CrossRefGoogle Scholar
  3. 3.
    L. Rodriguez, A. Poglitsch, A. Aliane, J. Martignac, D. Dubreuil, L. Dussopt, V. Revéret, V. Goudon, S. Bounissou, O-A. Adami, C. Delisle, O. Gevin, X. De La Broise, B. Maffei, J-L Sauvageot, J. Low Temp. Phys. (2018) (This special issue)Google Scholar
  4. 4.
    B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, 1st edn. (Springer, Berlin, 1984)CrossRefGoogle Scholar
  5. 5.
    A.L. Efros, B.I. Shklovskii, J. Phys. C Solid State Phys. 8, L49 (1975).  https://doi.org/10.1088/0022-3719/8/4/003 ADSCrossRefGoogle Scholar
  6. 6.
    S. Bounissou, V. Revéret, L. Rodriguez, A. Poglitsch, A. Aliane, O-A. Adami, V. Goudon, L. Dussopt, W. Rabaud, J. Low Temp. Phys. (2018) (This special issue)Google Scholar
  7. 7.
  8. 8.
    P.M. Downey, A.D. Jeffries, S.S. Meyer, R. Weiss, F.J. Bachner, J.P. Donnelly, W.T. Lindley, R.W. Mountain, D.J. Silversmith, Appl. Opt. (1984).  https://doi.org/10.1364/AO.23.000910 CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Obaïd-Allah Adami
    • 1
  • Louis Rodriguez
    • 1
  • Vincent Reveret
    • 1
  • Abdelkader Aliane
    • 2
  • Albrecht Poglitsch
    • 1
  • Jean-Luc Sauvageot
    • 1
  • Sophie Bounissou
    • 1
  • Valérie Goudon
    • 2
  • Laurent Dussopt
    • 2
  1. 1.IRFU, CEAUniversité Paris-SaclayGif-sur-YvetteFrance
  2. 2.CEA/LETIMINATECGrenoble Cedex 9France

Personalised recommendations