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Journal of Low Temperature Physics

, Volume 193, Issue 3–4, pp 217–224 | Cite as

Complex Impedance of Fast Optical Transition Edge Sensors up to 30 MHz

  • K. Hattori
  • R. Kobayashi
  • T. Numata
  • S. Inoue
  • D. Fukuda
Article

Abstract

Optical transition edge sensors (TESs) are characterized by a very fast response, of the order of \(\upmu \)s, which is \(10^3\) times faster than TESs for X-ray and gamma-ray. To extract important parameters associated with the optical TES, complex impedances at high frequencies (> 1 MHz) need to be measured, where the parasitic impedance in the circuit and reflections of electrical signals due to discontinuities in the characteristic impedance of the readout circuits become significant. This prevents the measurements of the current sensitivity \(\beta \), which can be extracted from the complex impedance. In usual setups, it is hard to build a circuit model taking into account the parasitic impedances and reflections. In this study, we present an alternative method to estimate a transfer function without investigating the details of the entire circuit. Based on this method, the complex impedance up to 30 MHz was measured. The parameters were extracted from the impedance and were compared with other measurements. Using these parameters, we calculated the theoretical limit on an energy resolution and compared it with the measured energy resolution. In this paper, the reasons for the deviation of the measured value from theoretically predicted values will be discussed.

Keywords

Transition edge sensor Complex impedance Thermal model 

Notes

Acknowledgements

TESs were fabricated by analog–digital superconductivity (CRAVITY) at AIST. A part of this work was conducted at the AIST Nano-Processing Facility, supported by Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

References

  1. 1.
    D. Fukuda et al., Opt. Express 19, 870 (2011)ADSCrossRefGoogle Scholar
  2. 2.
    A.E. Lita et al., Opt. Express 16, 3032 (2008)ADSCrossRefGoogle Scholar
  3. 3.
    L. Lolli et al., Appl. Phys. Lett. 103, 041107 (2013)ADSCrossRefGoogle Scholar
  4. 4.
    K. Niwa et al., Sci. Rep. 7, 45660 (2017)ADSCrossRefGoogle Scholar
  5. 5.
    E. Taralli et al., Supercond. Sci. Technol. 23, 105012 (2010)ADSCrossRefGoogle Scholar
  6. 6.
    E. Taralli et al., 2013 IEEE 14th International Superconductive Electronics Conference (ISEC) (2013). https://doi.org/10.1109/ISEC.2013.6604291
  7. 7.
    K.M. Kinnunen, M.R.J. Palosaari, I.J. Maasilta, J. Appl. Phys. 112, 034515 (2012)ADSCrossRefGoogle Scholar
  8. 8.
    K.D. Irwin, G.C. Hilton, Cryogenic particle detection. Top. Appl. Phys. 99, 63 (2005)Google Scholar
  9. 9.
    I.J. Maasilta, AIP Adv. 2, 042110 (2012)ADSCrossRefGoogle Scholar
  10. 10.
    K. Kinnunen, Ph.D. thesis, The University of Jyväskylä (2011)Google Scholar
  11. 11.
    A.G. Kozorezov, J.K. Wigmore, D. Martin, P. Verhoeve, A. Peacock, Appl. Phys. Lett. 89, 223510 (2006)ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.National Institute of Advanced Industrial Science and TechnologyTsukubaJapan
  2. 2.Institute of Quantum ScienceNihon UniversityChiyoda-kuJapan

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