Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Defects, electronic properties, and α particle energy spectrum response of the Cd0.9Mn0.1Te: V single crystal

  • 9 Accesses


Cadmium manganese telluride is a promising material for fabricating room-temperature nuclear radiation detectors widely used in medical imaging, environmental protection, nuclear security detection, astrophysics, and so on. The Cd0.9Mn0.1Te: V (V: CMT) crystal examined in this work was grown through the Te solution (10% excess) vertical Bridgman method. The low-temperature photoluminescence (PL) spectra indicated that the grown crystal has good quality. A simultaneous thermal excitation current spectrum was used to characterize the effect of vanadium doping on the level defects in the crystal. The current–voltage and Hall test results showed that the crystal resistivity was (3.781–6.185) × 1010 Ω cm. The conductivity was of n type. The carrier concentration was (1.69–9.94) × 106 cm−3. The Hall mobility was (3.08–9.29) × 103 cm−2 V−1 s−1. The maximum measured ratio of the light and dark currents, when the crystal was exposed to 5 mW white light, was 11. In addition, the room-temperature electron mobility-lifetime product of the middle sample was 6.925 × 10−4 cm2 V−1 using the 241Am@5.48 MeV α particle source.

This is a preview of subscription content, log in to check access.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7


  1. 1.

    T.E. Schlesinger, J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, R.B. James, Mater. Sci. Eng. 32, pp. 103–189, (2001).

  2. 2.

    J. Zhang, L. Wang, J. Min, J. Huang, X. Liang, K. Tang, P. Shen, M. Shen, W. Liang, N. Huang, Y. Xia, Phys. Status Solidi C11, pp. 1174–1177, (2014).

  3. 3.

    S. Sen, J.E. Stannard, Prog. Cryst. Growth Charact. 29, pp. 253–273, (1994).

  4. 4.

    G. Yang, W. Jie, T. Wang, G. Li, W. Li, H. Hua, Cryst. Growth Des. 7, pp. 435–438, (2007).

  5. 5.

    Y. Du, W. Jie, T. Wang, X. Zheng, Y. Xu, L. Luan, J. Cryst. Growth 355, pp. 33–37, (2012).

  6. 6.

    A. Hossain, Y. Cui, A.E. Bolotnikov, G.S. Camarda, G. Yang, D. Kochanowska, M. Witkowska-Baran, A. Mycielski, R.B. James, J. Electron. Mater. 38, pp. 1593–1599, (2009).

  7. 7.

    Kim K, Jeng G, Kim P, Choi J, Bolotnikov AE, Camarda GS, James RB (2013) J. Appl. Physiol. 114

  8. 8.

    G. Yang, W. Jie, Q. Zhang, J. Mater. Res. 21, pp. 1807–1809, (2006).

  9. 9.

    J. Zhang, L. Wang, J. Min, J. Huang, K. Qin, X. Liang, K. Tang, L. Peng, J. Alloys Compd. 509, pp. 4201–4204, (2011).

  10. 10.

    G. Li, X. Zhang, W. Jie, Semicond. Sci. Technol. 20, pp. 86–89, (2005).

  11. 11.

    M.J.M. Pavlović, H. Zorc, Z. Medunić, J. Appl. Physiol. 104, p. 023525, (2008).

  12. 12.

    M.P.A.U.V. Desnica, J. Appl. Physiol. 84, p. 2018, (1998).

  13. 13.

    Fu X, Xu Y, Gu Y, Jia N, Xu L, Zha G, Wang T, Jie W (2017) J. Appl. Physiol. 122

  14. 14.

    T. Wang, X. Ai, Z. Yin, Q. Zhao, B. Zhou, F. Yang, L. Xu, G. Zha, W. Jie, CrystEngComm 21(16), pp. 2620–2625, (2019).

  15. 15.

    G. Raji Soundararajan, A. Lynn Kelvin, S. Salah, S. Csaba, Wei, J. Electron. Mater. 35, pp. 1333–1340, (2006).

  16. 16.

    J.M. Francou, K. Saminadayar, J.L. Pautrat, Phys. Rev. B 41(17), pp. 12035–12046, (1990).

  17. 17.

    S.H. Wei, S.B. Zhang, Phys. Rev. B. 66(15), p. 155211, (2002).

  18. 18.

    A. Zerrai, K. Cherkaoui, G. Marrakchi, G. Bremond, P. Fougeres, M. Hage-Ali, J.M. Koebel, P. Siffert, J. Cryst. Growth. 197(3), pp. 646–649, (1999).

  19. 19.

    A. Cavallini, B. Fraboni, W. Dusi, M. Zanarini, J. Appl. Physiol. 94, pp. 3135–3142, (2003).

  20. 20.

    A. Zerrai, M. Dammak, G. Marrakchi, G. Brémond, R. Triboulet, Y. Marfaing, J. Cryst. Growth 197(3), pp. 729–732, (1999).

  21. 21.

    Wang P, Nan R, Jian Z (2017) J. Semicond. 38

  22. 22.

    P.F. Wang, R.H. Nan, Z.Y. Jian, J. Mater. Sci. 28, pp. 5568–5573, (2016).

  23. 23.

    P.F.A. Zumbiehl, M. Hage-Ali, J.M. Koebel, P. Siffert, A. Zerrai, K. Cherkaoui, G. Marrakchi, G. Bremond, J. Cryst. Growth 197, pp. 670–674, (1999).

  24. 24.

    C. Szeles, IEEE Trans. Nucl. Sci. 51, pp. 1242–1249, (2004).

  25. 25.

    Y. Du, W. Jie, X. Zheng, T. Wang, X. Bai, H. Yu, Trans. Nonferrous Met. Soc. China. 22, pp. 143–147, (2012).

  26. 26.

    J. Lai, J. Zhang, Y. Mao, L. Lin, J. Min, X. Liang, J. Huang, K. Tang, L. Wang, J. Electron. Mater. 47, pp. 4219–4225, (2018).

  27. 27.

    Yu P, Chen Y, Li W, Liu W, Liu B, Yang J, Ni K, Luan L, Zheng J, Li Z, Bai M, Sun G, Li H, Jie W (2018) Crystals 8

  28. 28.

    L. Luan, J. Zhang, T. Wang, W. Jie, Z. Liu, J. Cryst. Growth 459, pp. 124–128, (2017).

  29. 29.

    J.-H. Kim, H. Kim, K. Cho, S. Kim, Solid State Commun. 136, pp. 220–223, (2005).

  30. 30.

    A. Badawi, N. Al-Hosiny, S. Abdallah, H. Talaat, Mater. Sci. 31, pp. 6–13, (2012).

  31. 31.

    A. Larabi, G. Merad, I. Abdelaoui, A. Sari, Solid State Commun. 239, pp. 44–48, (2016).

  32. 32.

    R.B. James, K.A. Jones, A. Burger, G. Ciampi, C.E. Skrip, L.A. Franks, K.G. Lynn, Proc. SPIE. 6706, p. 670607, (2007).

Download references


The authors gratefully acknowledge the State Key Laboratory (in Northwestern Polytechnical University) of Solidification Processing for supplying the experimental equipment and test facilities. This work was financially supported by the National Natural Science Foundations of China (Nos. 51402022 and 51602026) and the Natural Science Basic Research Plan in Shaanxi (No. 2017 JM5129).

Author information

Correspondence to Lijun Luan.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Luan, L., He, Y., Zheng, D. et al. Defects, electronic properties, and α particle energy spectrum response of the Cd0.9Mn0.1Te: V single crystal. J Mater Sci: Mater Electron (2020). https://doi.org/10.1007/s10854-020-02996-6

Download citation