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Fabrication of visible light photodetector using co-evaporated Indium Sulfide thin films

  • B. Hemanth Kumar
  • S. Shaji
  • M. C. Santhosh KumarEmail author
Article
  • 69 Downloads

Abstract

Indium Sulfide (In2S3) is a promising candidate to replace Cadmium Sulfide (CdS) as a buffer layer in thin film solar cells because of its n-type conductivity and wide energy band gap. In this study, In2S3 thin films are deposited on glass substrates at different substrate temperatures in the range of 200–350 °C by co-evaporation technique. The X-ray diffraction and Raman analysis confirm the formation of tetragonal β-In2S3 thin films. The X-ray Photoelectron Spectroscopy and Energy Dispersive X-ray Spectroscopy results reveal presence of constituent elements. The energy band gap was observed in the range of 2.45–2.54 eV and band gap is increasing with increase of substrate temperature. Hall Effect measurement shows n-type conductivity for all films. Photodetectors were fabricated and tested under the light illumination by solar simulator with AM 1.5G filter. The photo detection parameters like sensitivity, responsivity and detectivity were calculated for all photodetectors.

Notes

Funding

This study was not funded by any external agency

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest with respect to the research work reported in this paper.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • B. Hemanth Kumar
    • 1
  • S. Shaji
    • 2
  • M. C. Santhosh Kumar
    • 1
    Email author
  1. 1.Optoelectronic Materials and Devices Laboratory, Department of PhysicsNational Institute of TechnologyTiruchirappalliIndia
  2. 2.Faculty of Mechanical and Electrical EngineeringUniversidad Autonoma de Nuevo Leon, Av. Universidad s/n, University City, Nuevo LeónSan Nicolas De Los GarzaMexico

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