Effect of SmFeO3 content on structure and multiferroic properties of mSmFeO3–Bi4Ti3O12 thin films

  • Li Luo
  • Yunfeng Guo
  • Wengang Yan
  • Kaili Liang
  • Qinchao Sun
  • Jie SuEmail author
  • Zongtao ChiEmail author
  • Xiaomei LuEmail author
  • Jinsong Zhu


mSmFeO3–Bi4Ti3O12 (m = 0.5, 1.0, 1.5, 2.0) thin films were prepared on silicon wafer by sol–gel progress. Their structure, leakage current density, ferroelectricity, magnetism, and dielectric property were investigated. All the samples have a single-phase Aurivillius structure. The interplanar spacing and volume of the unit cell decrease with the increase of SmFeO3 content. Moreover, the multiferroic properties have been significantly improved, with 2Prmax ~ 62 μC/cm2 (m = 0.5) and Msmax ~ 5.8 emu/cm3 (m = 2) at room-temperature. The samples with m = 0.5, 1, 1.5 exhibit Ohmic mechanism-dominated conductive behavior, however, for m = 2 sample, the space-charge-limited current mechanism becomes dominant. The dielectric constant εr of the thin films at 1 MHz for m = 0.5, 1.0, 1.5 and 2.0 are 498, 485, 272, and 217 respectively.



Li Luo and Yunfeng Guo contributed equally to this work. This work was supported by projects of NSFC (11374169), The Natural Science Foundation of Shandong Province (ZR2019MA004), and the National Key Research Program of China (2016YFA0201004).


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Authors and Affiliations

  1. 1.College of Physical Science and Key Laboratory of Photonics Materials and Technology in Universities of ShandongQingdao UniversityQingdaoPeople’s Republic of China
  2. 2.School of Electronic and Information EngineeringQingdao UniversityQingdaoPeople’s Republic of China
  3. 3.National Laboratory of Solid State Microstructures, Physics DepartmentNanjing UniversityNanjingPeople’s Republic of China

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