Photoelectrochemical performance of MoBiGaSe5 thin films deposited by vacuum deposition technique
- 61 Downloads
In the present investigation nanocrystalline mixed metal chalcogenide (MMC) MoBiGaSe5 thin films were successfully deposited by vacuum evaporation technique. The asdeposited and vacuum annealed MoBiGaSe5 thin films were studied for their optical, structural, morphological, compositional, electrical and photoelectrochemical (PEC) performance. Optical absorption studies revealed that asdeposited and vacuum annealed MoBiGaSe5 thin films showed absorption in the visible region. X-ray analysis of vacuum annealed film shows the phase transition from orthorhombic Bi2Se3 to stoichiometric hexagonal Bi2Se3 phase. The phase transition confirms the formation of hexagonal nanocrystalline MoBiGaSe5 pure phase. SEM images of the asdeposited film showed uniform well defined morphology, besides annealed sample, had diffused granular growth of uniform spheres. HRTEM images showed an average particle size 58 nm, and SAED pattern confirms the single crystalline hexagonal structure of MoBiGaSe5 thin films. EDS confirmed the presence of Mo, Bi, Ga and Se elements and XPS confirms Mo4+, Bi3+, Ga3+ and Se2− oxidation states. The AFM images were in good agreement with SEM images. Asdeposited and annealed MoBiGaSe5 thin film show semiconducting behavior with p-type conductivity. The PEC performance was studied, and it showed efficiency (ɳ) 0.004 and 0.097% of asdeposited and vacuum annealed MoBiGaSe5 thin films respectively.
One of the authors, S. V. Patil would like to thank DST for the availability of instruments purchased under DST-FIST programme at Chandmal Tarachand Bora College, Shirur file no. SR/FST/College - 068/2017.
- 1.M.F. Ashby, P.J. Ferreira, D.L. Schodek, Nanomaterials, Nanotechnologies and Design (Elsevier, Amsterdam, 2011)Google Scholar
- 4.M. Harati, J. Jia, K. Giffard, K. Pellarin, C. Hewson, D.A. Love, W.M. Lau, Z. Ding, One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells. Phys. Chem. Chem. Phys. 12, 15282–15290 (2010)CrossRefGoogle Scholar
- 14.S.S. Mohite, R.R. Kharade, S.S. Mali, D.G. Kanse, P.S. Patil, P.N. Bhosale, Low temperature synthesis of novel MoBiCuSe4 nanowire thin films by vacuum deposition method and their characterization. Res. J. chem. Environ. 15, 653–657 (2011)Google Scholar
- 20.S.P. Patil, R.M. Mane, R.R. Kharade, S.S. Mali, P.N. Bhosale, Novel synthetic route for quaternary MoBiGaSe5 mixed metal chalcogenide (MMC) thin films. Dig. J. Nanomater. Biostruct. 7, 237–245 (2012)Google Scholar
- 21.V.B. Ghanwat, S.S. Mali, C.S. Bagade, K.V. Khot, N.D. Desai, C.K. Hong, P.N. Bhosale, Enhancement in thermoelectric performance of Cu3SbSe4 thin films by In(III) doping; synthesized by arrested precipitation technique. J. Mater. Sci.: Mater. Electron. 29, 8793–8800 (2018)Google Scholar
- 26.S.V. Patil, R.M. Mane, N.B. Pawar, S.D. Kharade, S.S. Mali, P.S. Patil, G.L. Agawane, J.H. Kim, P.N. Bhosale, Opto-structural and electrical properties of chemically grown Ga doped MoBi2Se5 thin films. J. Mater. Sci.: Mater. Electron. 24, 4669–4676 (2013)Google Scholar