Journal of Materials Science: Materials in Electronics

, Volume 30, Issue 17, pp 16676–16686 | Cite as

Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device

  • Mine Keskin
  • Abdullah Akkaya
  • Enise AyyıldızEmail author
  • Ayşegül Uygun Öksüz
  • Mücella Özbay Karakuş


The electrical properties of Au/PEDOT:WO3/p-Si hybrid devices were studied in terms of current–voltage (I–V) and capacitance–voltage (C–V) measurements. Poly (3,4-ethylene dioxythiophene/tungsten trioxide (PEDOT:WO3) composite was prepared by an in situ chemical oxidative polymerization of monomer in 1-butyl-3-methylimidazoliumtetrafluoroborate (BMIMBF4). Optical and structural properties of the PEDOT:WO3 thin film was characterized by using FTIR, UV–Vis and AFM techniques. The bandgap energy of PEDOT:WO3 thin film was determined as 2.07 eV from UV–Vis spectrum. It was seen that the IV plots of the Au/PEDOT:WO3/p-Si hybrid devices were non-linear and C2V plots were linear in the reverse bias defining rectification behavior. The values of barrier height obtained from the IV and C2V plots of the fabricated devices were found to be 0.729 ± 0.012 eV and 0.817 ± 0.011 eV at room temperature in the dark environment, respectively. Devices have a high rectification behavior with a rectification ratio of 3.645 × 105 at ± 1 V. The temperature-dependent IV characteristics of one of the devices were also analyzed on the basis of the thermionic emission theory at low forward bias voltage regime. It was observed that the values of ideality factor decrease while the values of barrier height increase with increasing temperature. This kind of temperature dependence was attributed to the presence of the barrier inhomogeneity at the hybrid film/inorganic semiconductor interface. Then, by analysing of the forward bias IV characteristics at double logarithmic scale, it was seen that the carrier transport in the Au/PEDOT:WO3/p-Si hybrid device demonstrates the space-charge-limited current (SCLC) conduction mechanism controlled by a trap distribution above the valence band edge dominates in the range 0.1–0.3 V voltages. Furthermore, by analyzing the reverse bias IVT characteristics, it was shown that Schottky emission was the dominating current conduction mechanism in the temperature range of 240–320 K.



The authors would like to acknowledge the Scientific Research Projects Unit of Erciyes University for the financial support of project FYL-2018-8011, Erciyes University Nanotechnology Research Center (ERNAM) and Technology Research and Application Center (TAUM) for the AFM and UV–Vis measurements.


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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Mine Keskin
    • 1
  • Abdullah Akkaya
    • 2
  • Enise Ayyıldız
    • 3
    Email author
  • Ayşegül Uygun Öksüz
    • 4
  • Mücella Özbay Karakuş
    • 5
  1. 1.Department of Physics, Graduate School of Natural and Applied SciencesErciyes UniversityKayseriTurkey
  2. 2.Tech. Prog. Dept., Mucur Technical Vocational SchoolsAhi Evran UniversityKırşehirTurkey
  3. 3.Department of Physics, Faculty of SciencesErciyes UniversityKayseriTurkey
  4. 4.Department of Chemistry, Faculty of Arts and SciencesSüleyman Demirel UniversityIspartaTurkey
  5. 5.Department of Computer Engineering, Faculty of Engineering and ArchitectureBozok UniversityYozgatTurkey

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