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Journal of Materials Science: Materials in Electronics

, Volume 30, Issue 17, pp 16251–16256 | Cite as

Improved quality of InP layer on GaAs substrates by using compositionally modulated step-graded AlGaInAs buffers

  • Yang HeEmail author
  • Wei Yan
  • Yurun Sun
  • Jianrong Dong
Article
  • 14 Downloads

Abstract

Improved quality of metal–organic chemical vapor deposition grown InP layer on GaAs substrate was achieved by using compositional modulated step-graded AlGaInxAs (x = 0.05–0.52) buffers. With the insertion of tensile stained AlGaInAs layers into the compressive buffers, we obtained a high crystal quality InP layer with a smooth surface and low threading dislocation confirmed by atomic force microscopy, transmission electron microscopy, photoluminescence and X-ray diffraction reciprocal space mapping. This indicated that the tensile strained AlGaInAs layers into the compressive AlGaInAs layers can change the glide direction and facilitate annihilation reactions of dislocations, and the interfaces also can prevent the vertical growth of threading dislocations propagating through the structures. The results show that the compositional modulated step-graded AlGaInxAs buffers grown on GaAs hold great promise to be virtual substrates of other metamorphic devices.

Notes

Acknowledgements

This work was supported by the University-level scientific research projects of Changzhou College of Information Technology [Grant No. CXZK201806Q] and the CCIT Key Laboratory of Industrial IoT (KYPT201803Z).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.School of Electronic EngineeringChangzhou College of Information TechnologyChangzhouChina
  2. 2.Basic Courses DepartmentChangzhou College of Information TechnologyChangzhouChina
  3. 3.Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences (CAS)SuzhouChina

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